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12A, 30V , RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET 23-Jan-2014 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G 12N03SC  = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG12N03 provide the designer with the best Combination of fast swit ching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

FEATURES

 Low on-resistance  Simple Drive Requirement  Double-N MosFET Package MARKING CODE

PACKAGE INFORMATION

SOP-8 3K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V TA = 25°C 12 Continuous Drain Current 1 TA = 70°C ID 8.2 A Pulsed Drain Current 2 I DM 52 A Single Pulse Avalanche Energy 3 EAS 130 mJ Avalanche Current I AS 34 A Power Dissipation 4 P D 1.5 W Maximum Junction to Ambient 1 R θJA 85 °C / W Maximum Junction to Case 1 R θJC 50 °C / W Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

12A, 30V , RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET 23-Jan-2014 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS=0V, ID=250μA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS=VGS, ID =250μA Forward Transfer Conductance G fs - 35 - S V DS=5V, ID=10A Gate-Body Leakage I GSS - - ±100 nA V GS=±20V Gate Resistance R G - 2.1 3.5 Ω f=1.0MHz TJ=25°C - - 1 μA V DS=24V,VGS=0 Zero Gate Voltage Drain Current TJ=55°C IDSS - - 5 μA V DS=24V,VGS=0 - - 9 V GS=10V, ID =10A Drain-Source On-Resistance 2 R DS(ON) - - 13.5 mΩ VGS=4.5V, ID =8A Total Gate Charge Q g - 10.6 - Gate-Source Charge Q gs - 4 - Gate-Drain (“Miller”) Charge Q gd - 4.1 - nC ID=10A VDS=15V VGS= 4.5V Turn-On Delay Time T d(on) - 5.8 - Rise Time T r - 61 - Turn-Off Delay Time T d(off) - 23.6 - Fall Time T f - 7.6 - nS VDD=15V ID=10A VGS=10V RG=1.5Ω Input Capacitance C iss - 1127 - Output Capacitance C oss - 194 - Reverse Transfer Capacitance C rss - 77 - pF VGS=0V VDS=15V f=1.0MHz Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 45 - - mJ V DD=25V, L=0.1mH, IAS=20A Source-Drain Diode Continuous Source Current1.6 I S - - 12 Pulsed Source Current2.6 I SM - - 52 A V G=VD=0, Force Current. Forward On Voltage 2 V DS - - 1 V I S=1A, VGS=0, TJ =25°C Reverse Recovery Time T rr - 14.1 - nS Reverse Recovery Charge Q rr - 5.9 - nC IF=10A, dl/dt=100A/μs, TJ =25°C Notes: 1 surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 125 ℃/W when mounted on Min. copper pad.

2 The data tested by pulsed , pulse width ≦300us , duty cycle≦2%

3 The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=34A

4 The power dissipation is limited by 150 ℃ junction temperature

5 The Min. value is 100% EAS tested guarantee. 6 The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.

12A, 30V , RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET 23-Jan-2014 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE

12A, 30V , RDS(ON) 9m N-Channel Enhancement Mode Power MOSFET 23-Jan-2014 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE