SSG10N10 VBSEMI | Alldatasheet

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Technical content

N-Channel 100 V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition  Extremely Low Q gd for Switching Losses  100 % R g Tested  100 % Avalanche Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Primary Side Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A)a Qg (Typ.) 100 0.020 at VGS = 10 V 10.4 23 nC 0.027 at VGS = 8 V 9.5 SO-8 SD SD SD GD 5 Top View N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 10.4 A TC = 70 °C 9.1 TA = 25 °C 8.5b, c TA = 70 °C 7.5b, c Pulsed Drain Current IDM 50 Continuous Source-Drain Diode Current TC = 25 °C IS 4.5 TA = 25 °C 2.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 5.9 WTC = 70 °C 3.8 TA = 25 °C 3.1b, c TA = 70 °C 2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 10 s R thJA 33 40 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 SSG10N10 www.VBsemi.com g A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % a. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolut e Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise not ed) Parameter Symbol Test Conditions Min. T yp . Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V VDS Temperature Coefficient ΔVDS /TJ ID = 250 µA 172 mV/°CVGS(th) Temperature Coefficient ΔVGS(th) /TJ - 10 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.5 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 5 A 0.020 ΩVGS = 8 V, ID = 5 A 0.027 Forward Transconductancea gfs VDS = 15 V, ID = 5 A 23 S Dynamicb Input Capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 1735 pFOutput Capacitance Coss 16 0 Reverse Transfer Capacitance Crss 37 Total Gate Charge Qg VDS = 75 V, VGS = 10 V, ID = 5 A 28.5 43 nCVDS = 75 V, VGS = 8 V, ID = 5 A 23 35 Gate-Source Charge Qgs 8 Gate-Drain Charge Qgd 6.5 Gate Resistance Rg f = 1 MHz 0.85 1.3 Ω Turn-on Delay Time td(on) VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 14 21 ns Rise Time tr 12 18 Turn-Off Delay Time td(off) 22 33 Fall Time tf 61 0 Tur n-On Delay Time td(on) VDD = 50 V, RL = 10 Ω ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω 16 24 Rise Time tr 12 18 Turn-Off Delay Time td(off) 20 30 Fall Time tf 71 2 Drain-Source Body Diode Chara cteristics Continuous Source-Drain Diode Current I S TC = 25 °C 7.7 APulse Diode Forward Currenta ISM 50 Body Diode Voltage VSD IS = 2.6 A 0.77 1.2 V Body Diode Reverse Recovery T ime trr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 63 95 ns Body Diode Reverse Recovery Charge Qrr 110 165 nC Reverse Recovery F all Time ta 49 nsReverse Recovery Rise Time tb 14 SSG10N10 www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current an d Gate Voltage Gate Charge 012345 VDS - Drain-to-Source Voltage (V) ) A ( t n e r ruC ni a r D - ID V = 10 V thru 7 V V = 6 V V = 5 V GS GS GS 0.015 0.020 0.025 0.030 0.035 0.040 0 1 02 03 04 05 06 0 I D - Drain Current (A) VGS = 10 V R ) n o ( S D (Ω) e c n a t s i s eR - n O - VGS = 8 V 0 6 12 1 8 24 30 ID = 5 A )V( e g a t l oV e c ruoS - o t - e t a G - Qg - Total Gate Charge (nC) V SG VDS = 50 V VDS = 100 V VDS = 75 V Transfer Characteristics Capacitance On-Resistance vs. Jun ction Temperature 0.0 0.3 0.6 0.9 1.2 02468 10 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) ) A ( t n e r ruC ni a r D - ID Crss0 400 800 1200 1600 2000 02 0 4 0 6 0 80 100 Coss Ciss VDS - Drain-to-Source Voltage (V) ) F p ( e c n a t i c a p a C - C 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) R ) n o( S D e c n a t s i s e R - n O - ) d e z i l a m r oN( VGS = 10 V I D = 5 A VGS = 8 V SSG10N10 www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless other wise noted) Source-Drain Diode Forward Voltage Threshold Voltag e 0.1 0.01 0.001 VSD - Source-to-Drain Voltage (V) - (A) t n e r ruC e c ruoS IS 100 TJ = 25 °C TJ = 150 °C - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 5 mA TJ - Temperature ( C) V )ht(SG )V( On-Resistance vs. Gate-to-Source Voltage Sing le Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 02468 10 V GS - Gate-to-Source Voltage (V) R )no (SD (Ω) e c n a t s i s eR - n O e c ruo S - o t - n i a r D - ID = 5 A = 125 °C JT TJ = 25 °C 120 200 )W( r ewo P Time (s) 160 11 00.10.010.001 Safe Operating Area, Junction-to-Ambient * VGS minimum VGS at which RDS(on) is specified 100 0.01 ) A ( t n e r ruC n ia r D - ID 0.1 VDS - Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 TA = 25 °C Single Pulse 1 s 10 s DC 10 ms 100 ms 1 ms Limited by RDS(on)* SSG10N10 www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 ID ) A ( t n e r ruC n ia r D - TC - Case Temperature (°C) Power, Junction-to-Case 0.0 1.6 3.2 4.8 6.4 8.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power, Junction-t o-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) r (W) ewo P SSG10N10 www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless other wise noted) Normalized Thermal Transient Impedance, Junction -to-Ambient 10-3 10-2 10-1 100 Square Wave Pulse Duration (s) 10 10001 0.1 0.01 t n e i s n a r T evit c e f f E d e z i l a m r oN e c n a d e p m I l a m r e h T 10-4 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Notes: PDM 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 10-310 0.1 0.01 Square Wave Pulse Duration (s) t n e i s n a r T evit c e f f E d e z i l a m r oN e c n a d e p m I l a m r e h T -4 10 0.2 0.05 Single Pulse Duty Cycle = 0.5 0.02 10-2 10-1 1 SSG10N10 www.VBsemi.com g A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.18 9 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S SSG10N10 www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) SSG10N10 www.VBsemi.com g A ll data sheet.com

ue to improve reliability, function or design or for other reasons, product specifications and data are subje ct to change without notice. Taiwan VBsemi El ectronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representati ves (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete d ata contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi m akes no guarantee, representation or warranty on the product for any particular purpose of any goods or c ontinuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquishe d: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including bu t not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a p articular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is sui table for a particular application is non-binding. It is the customer's responsibility to verify specific product featu res in the products described in the specification is appropriate for use in a particular application. Parameter dat a sheets and technical specifications can be provided may vary depending on the application and performance ov er time. All operating parameters, including typical parameters must be made by customer's technical ex perts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchas ing terms and conditions, including but not limited to warranty herein. Unless expres sly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life susta ining applications or any other application. Wherein VBsemi product failure could lead to personal injury or deat h, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Cont act your authorized Taiwan VBsemi people who are related to product design applications and other terms a nd conditions in writing. The informati on provided in this document and the company's products without a license, express or implied, by estoppel o r otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trad emarks referred to herein are trademarks of their respective representatives will be all. MaterialCateg oryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS complia nt and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2 011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electroniceq uipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotetha tsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that al l products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free h alogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi docum ents still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfi rmcompliancewithIEC61249-2-21standardlevelJS709A. SSG10N10 www.VBsemi.com A ll data sheet.com