SSG10N03 SECOS | Alldatasheet

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Technical content

10A , 30V , R DS(ON) 9mΩ Dual-N Enhancement Mode Power MOSFET 30-Sep-2015 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOP -8 10N03SS /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSG10N03 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V VGS =10V, TA=25° C 10 A Continuous Drain Current 1 VGS =10V, TA=70° C ID 7 A Pulsed Drain Current 2 IDM 52 A Total Power Dissipation @ T A=25° C 4 P D 1.5 W Single Pulse Avalanche Energy 3 E AS 130 mJ Single Pulse Avalanche Current I AS 34 A Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 85 ° C / W Maximum Thermal Resistance Junction-Case 1 R θJC 50 ° C / W Date Code A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S G S D D D D

10A , 30V , R DS(ON) 9mΩ Dual-N Enhancement Mode Power MOSFET 30-Sep-2015 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D = 250 µA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25° C - - 1 V DS =24V, V GS =0 Drain-Source Leakage Current TJ=55° C IDSS - - 5 µA VDS =24V, V GS =0 - - 9 V GS =10V, I D =10A Static Drain-Source On-Resistance 2 R DS(ON) - - 13.5 m Ω VGS =4.5V, I D =8A Total Gate Charge Q g - 10.6 - Gate-Source Charge Q gs - 4.0 - Gate-Drain (“Miller”) Change Q gd - 4.1 - nC ID =10A VDS =15V VGS =4.5V Turn-on Delay Time T d(on) - 5.8 - Rise Time Tr - 61 - Turn-off Delay Time T d(off) - 23.6 - Fall Time Tf - 7.6 - nS VDD =15V ID =10A VGS =10V R G =1.5 Ω Input Capacitance C iss - 1127 - Output Capacitance C oss - 194 - Reverse Transfer Capacitance C rss - 77 - pF VGS =0 VDS =15V f =1.0MHz Forward Transconductance g fs - 35 - S V DS =5V , ID =10A Gate Resistance R g - - 5 Ω f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 45 - - mJ V DD =25V, L=0.1mH, I AS =20A Source-Drain Diode Diode Forward Voltage 2 V SD - - 1 V I S=1A, V GS =0, T J=25° C Continuous Source Current 1,6 I S - - 10 A Pulsed Source Current 2,6 I SM - - 52 A VD =V G =0, Force Current Reverse Recovery Time T RR - 14.1 - nS Reverse Recovery Charge Q RR - 5.9 - nC IF=10A, dI/dt=100A/µs, TJ=25° C Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 135° C/W when mounted on Min. copper pad. 2. The data tested by pulsed , pulse width ≦ 300 µs, duty cycle ≦ 2% 3. The EAS data shows Max. rating. The test condition is V DD =25V,V GS =10V,L=0.1mH, IAS =34A 4. The power dissipation is limited by 150° C, junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as I D and I DM , in real applications, should be limited by total power dissipation.

10A , 30V , R DS(ON) 9mΩ Dual-N Enhancement Mode Power MOSFET 30-Sep-2015 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

10A , 30V , R DS(ON) 9mΩ Dual-N Enhancement Mode Power MOSFET 30-Sep-2015 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES