SSG05N10J SECOS | Alldatasheet
Document overview
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Technical content
5A , 100V , R DS(ON) 140mΩ Dual-N Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOP -8 Q05N10 /box4/box4 /box4/box4 /box4/box4 /box4/box4 A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
SSG05N10J uses advanced trench technology and design to provide excellent R DS(on) with low gate charge. This device is suitable for the use in a wide variety of applications.
FEATURES
/circle6 Special processing technology for high ESD capability /circle6 High density cell design for ultra low RDS(on) /circle6 Good stability and uniformity with high EAS /circle6 Excellent package for good heat dissipation
APPLICATIONS
/circle6 Power switching application /circle6 Hard switching and high frequency circuits /circle6 Uninterruptible power supply MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 5 A Pulsed Drain Current 1 IDM 24 A Power Dissipation 1 PD 1.4 W Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Thermal Resistance Rating Thermal Resistance from Junction to Ambient 2 R θJA 89 ° C/ W Date Code G S G S D D D D A 5.80 6. 20 H 0.33 0.51 B 4.700 5. 10 J 0. 375 REF. C 3.80 4.00 K 45 °REF. D 0° 8° L 1.35 1. 75 E 0.40 1.27 M 0.10 0.25 F 0. 17 0. 25 N 0.25 REF. G 1.27 TYP .
5A , 100V , R DS(ON) 140mΩ Dual-N Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D =250 µA Drain-Source Leakage Current I DSS - - 1 µA V DS =100V, V GS =0 Gate-Source Leakage Current I GSS - - ±100 nA V DS =0V, VGS = ±20V Gate-Threshold Voltage 3 V GS(th) 1 - 2 V V DS =V GS , I D =250 µA Static Drain-Source On-Resistance 3 R DS(ON) - - 140 m Ω V GS =10V, I D =5A Forward Transconductance 3 g fs - 8 - S V DS =5V, ID =2.9A Diode Forward Voltage 3 V SD - - 1.2 V I S=5A, V GS =0 Dynamic Characteristics 4 Input Capacitance C iss - 690 - Output Capacitance C oss - 120 - Reverse Transfer Capacitance C rss - 90 - pF VDS =25V VGS =0 f=1MHz Switching Characteristics 4 Turn-on Delay Time T d(on) - 11 - Rise Time Tr - 7.4 - Turn-off Delay Time T d(off) - 35 - Fall Time Tf - 9.1 - nS VDS =30V VGS =10V R GEN =2.5 Ω R L=15 Ω ID =2A Total Gate Charge Q g - 15.5 - Gate-Source Charge Q gs - 3.2 - Gate-Drain (“Miller”) Change Q gd - 4.7 - nC VDS =30V VGS =10V ID =3A Notes: 1. Repetitive rating : Pulse width limited by the junction temperature. 2. Surface mounted on FR4 board, t 10s.≦ 3. Pulse Test : Pulse width ≦300 µs, duty cycle ≦2%. 4. Guaranteed by design, not subject to production.
5A , 100V , R DS(ON) 140mΩ Dual-N Enhancement Mode Power MOSFET 10-Feb-2017 Rev. B Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES