SSG0410 VBSEMI | Alldatasheet

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Technical content

N-Channel 100 V (D-S) MOSFET

FEATURES

  • TrenchFET ® Power MOSFET 1 0 0 % U I S T e s t e d

APPLICATIONS

 High Frequency Boost Converter  LED Backlight for LCD TV Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady stat e conditions is 85 °C/W. d. Base d on TC = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)d Qg (Typ.) 100 0.124 at VGS = 10 V 4.2 4.6 nC 0.128 at VGS = 4.5 V 3.9 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 4.2 A TC = 70 °C 3.5 TA = 25 °C 3.0a, b TA = 70 °C 2.4a, b Pulsed Drain Current IDM 16 Continuous Source-Drain Diode Current TC = 25 °C IS 4.0 TA = 25 °C 2a, b Single Avalanche Current L = 0.1 mH IAS 6 A Single Avalanche Energy EAS 1.8 mJ Maximum Power Dissipation TC = 25 °C PD 4.8 WTC = 70 °C 3 TA = 25 °C 2.4a, b TA = 70 °C 1.5a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t  10 s R thJA 42 53 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 21 26 D S D D G D SO-8 Top View 1 S S N-Channel MOSFET G D S SSG0410 www.VBsemi.com g A ll data sheet.com

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damag e to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 110 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ - 7.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 8A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 2.7 A VGS 4.5 V, ID = 2.5 A Forward Transconductancea gfs VDS = 10 V, ID = 2.7 A 7S Dynamicb Input Capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 470 pFOutput Capacitance Coss 50 Reverse Transfer Capacitance Crss 25 Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 2.7 A 7.1 11 nCVDS = 50 V, VGS = 6 V, ID = 2.7 A 4.6 7 Gate-Source Charge Qgs 1.7 Gate-Drain Charge Qgd 2 Gate Resistance Rg f = 1 MHz 3  Tur n-On Delay Time td(on) VDD = 50 V, RL = 23.8  ID  2.1 A, VGEN = 6 V, Rg = 1  10 15 ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 10 15 Fall Time tf 10 15 Tur n-On Delay Time td(on) VDD = 50 V, RL = 23.8  ID  2.1 A, VGEN = 10 V, Rg = 1  10 15 Rise Time tr 10 15 Turn-Off Delay Time td(off) 12 20 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Dio de Current IS TC = 25 °C 4 A Pulse Diode Forward Current ISM 8 Body Diode Voltage VSD IS = 2.1 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C 50 80 ns Body Diode Reverse Recovery Charge Qrr 75 120 nC Reverse Recovery Fall Time ta 28 ns Reverse Recovery Rise Time tb 22 SSG0410 www.VBsemi.com 0.124 0.128 1 3 V g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge VGS = 10 V thru 6 V 4 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 5 V - On-Resistance ()RDS(on) 0.00 0.05 0.10 0.15 0.20 0.25 02468 ID - Drain Current (A) VGS = 10 V VGS = 4.5V 024 68 ID = 2.7 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 50 V VDS = 80 V 024 68 VDS = 50 V VDS = 80 V Transfer Characteristics Capacitance On-Resistance vs. Junction Te mperature 0123456 TC = 125 °C 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID - 55 °C 100 200 300 500 600 0 1 02 03 04 05 06 0 VDS - Drain-to-Source Voltage (V) rss Coss Ciss C - Capacitance (pF) C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 2.7 A TJ - Junction Temperature (°C) (Normalized) - On-Resistance RDS(on) SSG0410 www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise not ed) Source-Drain Diode Forward Voltage Threshold Voltage TJ = 150 °C TJ = 25 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS 2.0 2.4 2.8 3.2 3.6 4.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.0 0.1 0.2 0.3 0.4 02468 1 0 ID = 2.7 A - On-Resistance ()RDS(on) VGS - Gate-to-Source Voltage (V) Power (W) Time (s) 10 10000.10.010.001 1001 Safe Operating Area, Junction-to-Ambient - Drain Current (A)I D 0.01 0 0 0 10 111 . 0 0.1 TA = 25 °C Single Pulse 10 ms 1 s DC 100 µs 100 1 ms VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Limited by R *DS(on) BVDSS Limited 10 s 100 ms SSG0410 www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power Derating 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) SSG0410 www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise not ed) Normalized Thermal Transient Impedance, Junction-to-Amb ient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1010-110-4 1 0.1 0.01 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Single Pulse SSG0410 www.VBsemi.com g A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1 .27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S SSG0410 www.VBsemi.com g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index SSG0410 www.VBsemi.com g A ll data sheet.com

All products due to improve reliabi lity, function or design or for other reasons, product specifications and data are subject to change withou t notice. Taiwan VBsemi Electronics Co., Ltd. , branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in th e table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, re presentation or warranty on the product for any particular purpose of any goods or continuous producti on. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any applicati on and all liability arising out of or use of any products; (2) any and all liability, including but not limited to spe cial, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of app lications are based on knowledge of the product is often used in a typical application of the general produc t VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particul ar application is non-binding. It is the customer's responsibility to verify specific product features in the products de scribed in the specification is appropriate for use in a particular application. Parameter data sheets and techni cal specifications can be provided may vary depending on the application and performance over time. All operati ng parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and condi tions, including but not limited to warranty herein. Unless expressly stated in writi ng, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining application s or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of prod ucts used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorize d Taiwan VBsemi people who are related to product design applications and other terms and conditions in wr iting. The information provided in this d ocument and the company's products without a license, express or implied, by estoppel or otherwise, to any i ntellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to here in are trademarks of their respective representatives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd ., hereby certify that all of the products are determined to be oHS compliant and meets the defin ition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipment(EEE)-modific ation,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotethatsomedocumentsma ystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all products identifie d as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standard s required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the d efinition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcompliancewithI EC61249-2-21standardlevelJS709A. SSG0410 www.VBsemi.com A ll data sheet.com