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N-Ch Enhancement Mode Power MOSFET

3.8 A, 100 V , RDS(ON) 158 m Elektronische Bauelemente

01-Jun-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G Gate  Source Drain 

DESCRIPTION

The SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

 Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic MARKING MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 3 ID @ TA = 25°C 3.8 A ID @ TA = 70°C 3.0 A Pulsed Drain Current 1 I DM 8 A Total Power Dissipation P D 2.5 W Linear Derating Factor 0.02 W / °C Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS Thermal Resistance Junction-ambient 3 (Max.) RθJA 50 °C / W SOP-8 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. 0410SC S S S G D D D D  = Date Code 2 3 4 5 6 7 8

N-Ch Enhancement Mode Power MOSFET 01-Jun-2010 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Drain-Source Breakdown Voltage BV DSS 100 - - V V GS=0V, ID =1mA Gate Threshold Voltage V GS(th) 1.0 - 3.0 V V DS=10V, ID =1mA Forward Transconductance g fs - 4 - S V DS=10V, ID =2.5A Gate-Source Leakage Current I GSS - - ±100 nA V GS=±20V Drain-Source Leakage Current(TJ=25°C) IDSS - - 10 μA V DS=100V, VGS=0V Drain-Source Leakage Current(TJ=55°C) - - 25 μA V DS=100V, VGS=0V Static Drain-Source On-Resistance 2 R DS(ON) - - 158 mΩ VGS=10V, ID=2.7A - - 175 V GS=6V, ID=2.5A Total Gate Charge 2 Q g - 11.2 30 nC V DS=80V, ID =3.5A, VGS=5V Gate-Source Chagre Q gs - 4.4 - Gate-Drain (“Miller”) Change Q gd - 3 - Turn-on Delay Time 2 T d(ON) - 9 - nS VDS=30V, VGS=10V I D=1A, RL=30Ω, RG=6Ω Rise Time T r - 9.4 - Turn-off Delay Time T d(OFF) - 26.8 - Fall Time T f - 2.6 - Input Capacitance C ISS - 975 1670 pF VDS=25V VGS=0V f=1MHz Output Capacitance C OSS - 38 - Reverse Transfer Capacitance C RSS - 27 - SOURCE-DRAIN DIODE Forward On Voltage 2 V SD - - 1.2 V I S=3.8A, VGS=0V Notes： 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300 μs, duty cycle 2≦≦ ％. 3. Surface mounted on 1 in 2 copper pad of FR4 board；125 °C / W when mounted on Min. copper pad.

N-Ch Enhancement Mode Power MOSFET 01-Jun-2010 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

N-Ch Enhancement Mode Power MOSFET 01-Jun-2010 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES