SSFT4003 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 8 Rev.2.1 Main Product Characteristics V DSS 40V R DS (on) 2.4mΩ(typ.) I D 200A Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 200 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 135 I DM Pulsed Drain Current 750 A Power Dissipation 220 W P D @TC = 25°C Linear Derating Factor 1.5 W/°C V DS Drain-Source Voltage 40 V V GS Gate-to-Source Voltage ± 24 V E AS Single Pulse Avalanche Energy @ L=0.3mH 912 mJ I AS Avalanche Current @ L=0.3mH 78 A T J T STG Operating Junction and Storage Temperature Range -55 to +175 °C TO-220 SSFT4003 Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. TO-263 SSFT4003A

www.goodark.com Page 2 of 8 Rev.2.1 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 0.62 ℃/W Junction-to-ambient (t ≤ 10s) — 60 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) — 40 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 40 — — V V GS = 0V, I D = 250μA — 2.4 3.5 V GS =10V,I D = 30A R DS(on) Static Drain-to-Source on-resistance — 4.1 — mΩ T J = 125℃ 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.0 — V T J = 125℃ — — 1 V DS = 40V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =24V I GSS Gate-to-Source forward leakage -100 nA V GS = -24V Q g Total gate charge — 104 Q gs Gate-to-Source charge — Q gd Gate-to-Drain("Miller") charge — nC I D = 75A, V DS 32V, V GS = 10V t d(on) Turn-on delay time — 21.4 t r Rise time — 57.8 t d(off) Turn-Off delay time — 48.7 t f Fall time — 19.9 ns V GS =10V, V DS =20V, R L =0.26Ω, R GEN =3.0Ω， I D = 75A C iss Input capacitance — 7615 C oss Output capacitance — 959 C rss Reverse transfer capacitance — 342 pF V GS = 0V, V DS = 25V, ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 200 A I SM Pulsed Source Current (Body Diode) — — 750 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.86 1.3 V I S =30A, V GS =0V t rr Reverse Recovery Time — 29.6 — ns Q rr Reverse Recovery Charge — 22.2 — nC T J = 25°C, I F =50A, di/dt = 100A/μs

www.goodark.com Page 3 of 8 Rev.2.1 Test Circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max junction temperature. ③The power dissipation PD is based on max junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 6 of 8 Rev.2.1 Mechanical Data Min Nom Max Min Nom Max e Q 1 5 Q 2 5 Q 3 Q 4 1 0.2BSC 7.35REF 0.29REF Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC 5.08BSC TO220 PACKAGE OUTLINE DIMENSION_GN

www.goodark.com Page 7 of 8 Rev.2.1 Min Max Min Max A 9.660 10.280 0.380 0.405 B 1.020 1.320 0.040 0.052 C 8.590 9.400 0.338 0.370 D1 1.140 1.400 0.045 0.055 D2 0.700 0.950 0.028 0.037 E 15.090 15.390 0.594 0.606 F 1.150 1.400 0.045 0.055 G 4.300 4.700 0.169 0.185 H 2.290 2.790 0.090 0.110 I K 1.300 1.600 0.051 0.063 a1 0.450 0.650 0.018 0.026 a2 0 Symbol Dimension In Millimeters Dimension In Inches 5.080 (TYP) 0.250 (TYP) 0.010 (TYP) 0.200 (TYP) D2PAK PACKAGE OUTLINE DIMENSION

www.goodark.com Page 8 of 8 Rev.2.1 Ordering and Marking Information Device Marking: SSFT4003 & SSFT4003A Package (Available) TO220/TO263 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6 6000 D2PAK 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ to 175 ℃ @ 80% of Max V DSS CES R 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=150℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices