SSFT4002

SSFT4002 SILIKRON | Alldatasheet

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www.silikron.com Main Product Characteristics: VDSS 40V RDS(on) 2.1 mohm ID 220A Features and Benefits: Advanced trench MOSFET process technology  Special designed for Convertors and power controls  Ultra low on-resistance  175℃ operating temperature  High Avalanche capability and 100% tested Description: It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Absolute max Rating: Parameter Max. Units ID @ TC = 25° C Continuous Drain Current, VGS @ 10V (Silicon Limited) 220 A ID @ TC = 100° C Continuous Drain Current, VGS @ 10V 145 ID @ TC = 25° C Continuous Drain Current, VGS @ 10V (Package Limited) 85 IDM Pulsed Drain Current① 850 PD @TC = 25° C Power Dissipation 220 W Linear Derating Factor 1.5 W/° C VGS Gate-to-Source Voltage ± 24 V EAS Single Pulse Avalanche Energy② 1200 mJ IAS Avalanche Current @ L=0.3mH 90 A TJ TSTG Operating Junction and Storage Temperature Ran ge -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Characterizes Value Unit RθJC Junction-to-case 0.62 ℃/W RθJA Junction-to-ambient ④ 60 ℃/W Junction-to-Ambient (PCB mounted, steady-state)⑤ 40 ℃/W SSFT3906 SSFT4002 SSFT3906SSFT4002 TO220 Marking and pin Assignment Schematic diagram

www.silikron.com Electrical Characterizes @TA=25℃ unless otherwise specified Parameter Min. Typ. Max Units Conditions BVDSS Drain-to-Source breakdown voltage 40 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 2.1 2.5 mΩ VGS = 10V, ID = 30A③ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 10 μA VDS = 40V, VGS = 0V — — 150 VDS = 40V, VGS = 0V, TJ = 125° C IGSS Gate-to-Source forward leakage — — 100 nA VGS = 24V Gate-to-Source reverse leakage — — -100 VGS = -24V Qg Total gate charge — 220 — nC ID = 75A VDS = 32V VGS = 10V③ Qgs Gate-to-Source charge — 56 — Qgd Gate-to-Drain("Miller") charge — 56 — td(on) Turn-on delay time — 33 — ns VDD = 20V ID = 75A RG = 3.0 Ω VGS = 10V③ tr Rise time — 133 — td(off) Turn-Off delay time — 120 — tf Fall time — 80 — Ciss Input capacitance — 15300 — pF VGS = 0V VDS = 25V ƒ = 1.0MHz Coss Output capacitance — 1290 — Crss Reverse transfer capacitance — 306 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max Units Conditions IS Continuous Source Current (Body Diode) — — 75 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 750 TJ = 25° C, IS = 75A, VGS = 0V③ VSD Diode Forward Voltage — 0.85 1.3 V TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/μs③ trr Reverse Recovery Time — 37 45 ns TJ = 25° C, IF = 65A, VDD = 20V di/dt = 100A/μs③ Qrr Reverse Recovery Charge — 36 55 nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.silikron.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: 100 1000 0.1 1 10 100 Vds,Drain-to-Source Voltage(V) Id,Drain-to-Source Curent(A) Fig 3. Typical Capacitance Vs. Drain-to-Source Voltage 0.00 1000.00 2000.00 3000.00 4000.00 5000.00 6000.00 7000.00 8000.00 9000.00 10000.00 1 10 100 Vds,Drain-to-Source Voltage(V) C,Capacitance(pF) Vgs =0V,f=1MHZ Ciss= Cgs + Cgd,Cds Shorted Crss= Cgd Coss= Cds + Cgd Coss Ciss Crss Fig 2. Typical Output Characteristics 100 1000 0.1 1 10 100 Vds,Drain-to-Source Voltage(V) Id,Drain-to-Source Curent(A)Fig 1. Typical Output Characteristics Fig 4. Typical Transfer Characteristics 4.5v 15v 4.5v 15v 380us pulse width Tj=25 O C 380us pulse width Tj=150 O C 5.5v 6v 10v 5.5v 6v 10v 100 1000 4 5 6 7 8 9 10 Vgs, Gate-to-Source Voltage (V) Id, Drain-to-Source Current (A) Tj=25C Tj=175C Fig 5. Maximum Drain Current Vs. Case Temperature Temperature Case Temperature 100 1000 1 10 100 Vds, Drain-Source Voltage (V) Id, Drain Current (A) Id(A) @Pw =10ms Id(A) @Pw =1ms Id(A) @Pw =100us Id(A) @Pw =10us Tj,(Max)=175℃ Ta=25℃ Single Pulse Rds(on) Limited Fig 6. SOA, Safe Operation Area Case Temperature

www.silikron.com 0.001 0.01 0.1 t1, Pulse Duration Time (sec) Zthjc, Transient Thermal Response (C/W) Zthjc @ D=0.9 Zthjc @ D=0.7 Zthjc @ D=0.5 Zthjc @ D=0.3 Zthjc @ D=0.1 Zthjc @ D=0.05 Zthjc @ D=0.02 Zthjc @ D=0.01 Zthjc @ D=0.005 Zthjc @ D=Single Pulse Duty Cycle, D=t1 / t2 Tj,max=Pdm*Zthjc+Tc Id=75A Vgs=10V 0.5 1.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj,Junction Temperature(°C) Rdson,Drain-to-Source On Resistance(Normalized) Fig 7. Normalized On-Resistance Vs. Temperature Vs. Temperature Temperature Case Temperature Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case. Case Temperature 0.1 100 1000 0.4 0.6 0.8 1 1.2 Vsd.Source-to-Drain Voltage(V) Isd,Reverse Drain Current(A) Fig 8. Typical Source-Drain Diode Forward Voltage Tj=25C Tj=175C Vgs=0v

www.silikron.com Notes: ①Repetitive rating; pulse width limited by max. junction temperature. ②Limited by TJmax, starting TJ = 25° C, L = 0.3mH RG =50Ω, IAS = 82A, VGS =10V. Part not recommended for use above this value. ③Pulse width < 1.0ms; duty cycle<2%. ④This is only applied to TO-220 package. ⑤for D2-PAK package, When mounted on 1" square PCB ( FR-4 or G-10 Material ).

www.silikron.com Mechanical Data： Min Nom Max Min Nom Max ФP1 1.500 0.059 e ϴ1 - 70 - - 70 - ϴ2 - 70 - - 70 - ϴ3 - 30 - 50 70 90 ϴ4 - 30 - 10 30 50 Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC TO220 PACKAGE OUTLINE DIMENSION_GN E D ФP A ce b ϴ2 ϴ3 L ФP1