SSFT3102 SILIKRON | Alldatasheet
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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 1 of 7 MainProductCharacteristics: FeaturesandBenefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID@TC=25°C ContinuousDrainCurrent,VGS @ 10V① 180 A IDM PulsedDrainCurrent② 720 PD @TC=25°C PowerDissipation③ 24 W VDS Drain-SourceVoltage 30 V VGS Gate-to-SourceVoltage ±20 V EAS SinglePulseAvalancheEnergy@L=0.5mH 324 mJ TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 30V RDS(on) 1.95mΩ(typ.) ID 180A PinAssignments SchematicDiagram AdvancedMOSFETprocesstechnology Special designed for PWM, load switching and generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃ operatingtemperature Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. TO-220
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 2 of 7 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 1.15 ℃/W Electrical Characteristics @TA=25℃unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 30 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 1.95 2.4 mΩ VGS=10V,ID =30A — 3.5 5 VGS=4.5V,ID =20A VGS(th) Gatethresholdvoltage 1 — 2.5 V VDS =VGS,ID =250μA IDSS Drain-to-Sourceleakagecurrent — — 1 μA VDS =30V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =20V — — -100 VGS =-20V Qg Totalgatecharge — 72 — nC ID =30A, VDS=15V, VGS =10V Qgs Gate-to-Sourcecharge — 11 — Qgd Gate-to-Drain("Miller")charge — 15 — td(on) Turn-ondelaytime — 10.2 — ns VGS=10V,VDS=15V, RGEN=3Ω ID =30A tr Risetime — 6.4 — td(off) Turn-Offdelaytime — 75 — tf Falltime — 16 — Ciss Inputcapacitance — 4932 — pF VGS =0V VDS =15V ƒ=1MHz Coss Outputcapacitance — 685 — Crss Reversetransfercapacitance — 566 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 180 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — 720 A VSD DiodeForwardVoltage — — 1.2 V IS=30A,VGS=0V trr ReverseRecoveryTime — 30 — ns IF=20A,di/dt=100A/us Qrr ReverseRecoveryCharge — 15 — nC
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 3 of 7 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PDisbased onmax. junctiontemperature, usingjunction-to-casethermal resistance.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 5 of 7 Typical Electrical and Thermal Characteristics Figure7.Drain-to-Source Breakdown Voltage vs. Temperature Figure8.Normalized On-Resistance vs. Junction Temperature Figure9.Safe Operating Area Figure10.Drain Current vs. Case Temperature Figure11.Normalized Maximum Transient Thermal Impedance
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 6 of 7 Mechanical Data：
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