SSFP5N45 GOOD-ARK | Alldatasheet
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Technical content
T Power MOSFET Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability
Description
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application Switching application Absolute Maximum Ratings Parameter Max. Units I D @Tc=25ْC Continuous Drain Current,V GS @10V 4.9 I D @Tc=100ْC Continuous Drain Current,V GS @10V 3.1 I DM Pulsed Drain Current A P D C =25ْC Power Dissipation W Linear Derating Factor 0.59 W/ْC V GS Gate-to-Source Voltage ±20 V E AS Single Pulse Avalanche Energy 330 mJ I AR Avalanche Current 4.9 A E AR Repetitive Avalanche Energy 7.4 mJ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T J T STG Operating Junction and Storage Temperature Range –55 to +150 Soldering Temperature, for 10 seconds 300(1.6mm from case) Mounting Torque,6-32 or M3 screw
10 Ibf
in(1.1N Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case 1.70 R θCS Case-to-Sink,Flat,Greased Surface 0.50 R θJA Junction-to-Ambient 62.0 ْC/W Pin1–Gate Pin2–Drain Pin1–Source V DSS = 450V I D25 = 4.9A R DS(ON) = 1.2Ω
T Power MOSFET Electrical Characteristics @T J =25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 450 — V V GS =0V,I D 250μA V (BR)DSS T J Breakdown Voltage Temp.Coefficient — 0.63 — V/ْC Reference to 25ْC,I D =1mA R DS(on) Static Drain-to-Source On-resistance — — 1.2 Ω V GS =10V,I D =2.9A V GS(th) Gate Threshold Voltage 2.0 — 4.0 V V DS = V GS D =250μA g fs Forward Transconductance 3.0 — S V DS =50V,I D =2.9A — — V DS =400V,V GS =0V I DSS Drain-to-Source Leakage current — — 250 μA V DS =360V,V GS =0V,T J =125ْC Gate-to-Source Forward leakage — — 100 V GS =20V I GSS Gate-to-Source Reverse leakage — — -100 nA V GS =-20V Q g Total Gate Charge — — 45 Q gs Gate-to-Source charge — — 6.6 Q gd Gate-to-Drain("Miller") charge — — 24 nC I D = 4 . 9 A V DS =360V V GS =10V t d(on) Turn-on Delay Time — 5.9 t r Rise Time — 22 t d(off) Turn-Off Delay Time — 40 t f Fall Time — 21 nS V DD =225V I D = 4 . 9 A R G =12Ω R D =45Ω L D Internal Drain Inductance — 4.5 — L S Internal Source Inductance — 7.5 — nH Between lead, 6mm(0.25in.) from package and center of die contact C iss Input Capacitance — 680 — C oss Output Capacitance — 190 — C rss Reverse Transfer Capacitance — 75 pF V GS = 0 V V DS = 2 5 V f =1.0MH Z Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current . (Body Diode) 4.9 I SM Pulsed Source Current . (Body Diode) ① A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage 2.0 V T J =25ْC,I S =4.9A,V GS =0V ④ t rr Reverse Recovery Time 460 690 nS Q rr Reverse Recovery Charge 1.8 2.7 nC T J =25ْC,I F =4.9A di/dt=100A/μs ④ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + L D Notes: ① Repetitive rating;pulse width limited by ③ I SD ≤4.9A,di/dt≤80A/μS,V DD (BR)DSS m a x . j u n c t i o n t e m p e r a t u r e T J≤150ْC L = 24mH, IAS = 4.9 A, R G = 25Ω, ④ Pulse width ≤300μS; duty cycle≤2% S t a r t i n g T J = 2 5 ° C