SSFP10N10 GOOD-ARK | Alldatasheet

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Technical content

T Power MOSFET Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability

Description

StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application Switching application Absolute Maximum Ratings Parameter Max. Units I D @Tc=25ْC Continuous Drain Current,V GS @10V 9.2 I D @Tc=100ْC Continuous Drain Current,V GS @10V 6.5 I DM Pulsed Drain Current A P D C =25ْC Power Dissipation W Linear Derating Factor 0.3 W/ْC V GS Gate-to-Source Voltage ±20 V E AS Single Pulse Avalanche Energy 113 mJ I AR Avalanche Current 9.2 A E AR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 6.5 V/ns T J T STG Operating Junction and Storage Temperature Range –55 to +175 Soldering Temperature, for 10 seconds 300(1.6mm from case) Mounting Torque,6-32 or M3 screw

10 Ibf

in(1.1N Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case 3.31 R θCS Case-to-Sink,Flat,Greased Surface 0.50 R θJA Junction-to-Ambient 62.5 ْC/W Pin1–Gate Pin2–Drain Pin1–Source V DSS = 100V I D25 = 9.2A R DS(ON) = 0.2Ω

T Power MOSFET Electrical Characteristics @T J =25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 100 — V V GS =0V,I D 250μA V (BR)DSS T J Breakdown Voltage Temp.Coefficient — 0.12 — V/ْC Reference to 25ْC,I D =1mA R DS(on) Static Drain-to-Source On-resistance — — 0.2 Ω V GS =10V,I D =4.6A V GS(th) Gate Threshold Voltage 2.0 — 4.0 V V DS =5V,I D =250μA g fs Forward Transconductance — 6.35 — S V DS =40V,I D =4.6A — — V DS =100V,V GS =0V I DSS Drain-to-Source Leakage current — — 100 μA V DS =80V,V GS =0V,T C =150ْC Gate-to-Source Forward leakage — — 100 V GS =20V I GSS Gate-to-Source Reverse leakage — — -100 nA V GS =-20V Q g Total Gate Charge — 16 Q gs Gate-to-Source charge — 2.7 Q gd Gate-to-Drain("Miller") charge — 7.8 nC I D = 9 . 2 A VDS=80V VGS=10V t d(on) Turn-on Delay Time — 9 t r Rise Time — 30 t d(off) Turn-Off Delay Time — 18 t f Fall Time — 20 nS V DD = 5 0 V I D = 9 . 2 A R G =18Ω L D Internal Drain Inductance — 5.0 L S Internal Source Inductance — 13 nH Between lead, 6mm(0.25in.) from package and center of die contact C iss Input Capacitance — 370 480 C oss Output Capacitance — 95 110 C rss Reverse Transfer Capacitance — 38 pF V GS = 0 V V DS = 2 5 V f =1.0MH Z Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current . (Body Diode) 9.2 I SM Pulsed Source Current . (Body Diode) ① A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage 1.5 V T J =25ْC,I S =9.2A,V GS =0V ④ t rr Reverse Recovery Time nS Q rr Reverse Recovery Charge 0.34 nC T J =25ْC,I F =9.2A di/dt=100A/μs ④ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + L D Notes: ① Repetitive rating;pulse width limited by ③ I SD ≤9.2A,di/dt≤300A/μS,V DD (BR)DSS max.junction temperature(see figure 11) T J =25ْc L =2mH, I AS = 9.2 A, V DD = 2 5 V , ④ Pulse width=250 μS; duty cycle≤2% R G = 27Ω, Starting T J = 2 5 ° C