SSFN3313 GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 4 Rev.1.0 SSF N3313 30V P-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFN3313 SSFN3313 DFN3x3-8L - - - ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V I D (25 -8 A I D (70 -6 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -45 A Maximum Power Dissipation P D 3.1 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 40 ℃/W ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 V Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V -1 μA GENERAL FEATURES
- V DS =-30V,I D =-8A R DS(ON) < 25mΩ @ V GS =-4.5V R DS(ON) < 14mΩ @ V GS =-10V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSFN3313 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
APPLICATIONS
- PWM applications
- Load switch
- Power management Schematic D iagram Marking and P in Assignment DFN3 8L B ottom View D G S
www.goodark.com Page 2 of 4 Rev.1.0 SSF N3313 30V P-Channel MOSFET Gate-Body Leakage Current I GSS V GS =±25V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -1.7 -2.2 -3 V V GS =-4.5V, I D =-7A 13 17 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D =-9A 11 14 mΩ Forward Transconductance g FS V DS =-5V,I D =-10A 18 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 1500 PF Output Capacitance C oss 300 PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz 182 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 12 nS Turn-on Rise Time t r 11 nS Turn-Off Delay Time t d(off) 25 nS Turn-Off Fall Time t f V DS =-15V,V GS =-10V,R GEN =3Ω I D =1A 10 nS Total Gate Charge Q g 22 nC Gate-Source Charge Q gs 7 nC Gate-Drain Charge Q gd V DS =-15V,I D =-10A,V GS =-10V 4.5 nC Body Diode Reverse Recovery Time T rr 29 nS Body Diode Reverse Recovery Charge Q rr I F =-10A, dI/dt=100A/µs 15 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A -0.74 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SSF N3313 30V P-Channel MOSFET DFN3×3-8L PACKAGE INFORMATION COMMON DIMENSIONS(MM) PKG. W ： VERY VERY THIN REF. MIN. NOM. MAX. A 0.70 0.75 0.80 A1 0.00 － 0.05 A3 0.2REF. D 2.95 3.00 3.05 E 2.95 3.00 3.05 b 0.25 0.30 0.35 L 0.30 0.40 0.50 D2 2.30 2.45 2.55 E2 2.50 1.65 1.75 e 0.65BSC NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. TOP VIEW BOTTOM VIEW SIDE VIEW