SSFN2269 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev.1.1 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFN2269 SSFN2269 DFN2X2-6L － － － ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±8 V I D -3.3 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -20 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 83 /W℃ GENERAL FEATURES
- V DS = -20V,I D =-3.3A R DS(ON) < 90mΩ @ V GS =-4.5V R DS(ON) < 120mΩ @ V GS =-2.5V
- High Power and current handing capability
- Lead free product
- Surface Mount Package A PPLICATIONS
- Battery protection
- Load switch
- Power management Marking and P in Assignment DFN L
DESCRIPTION
The SSFN2269 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. Schematic Diagram
www.goodark.com Page 2 of 4 Rev.1.1 ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -20 V Zero Gate Voltage Drain Current I DSS V DS =-16V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±8V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -0.4 -0.7 -1 V V GS =-4.5V, I D =-2A 70 90 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-2A 91 120 mΩ Forward Transconductance g FS V DS =-5V,I D =-2A 3 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 530 636 PF Output Capacitance C oss 100 120 PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz 60 72 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 6 7.2 nS Turn-on Rise Time t r 12 14.4 nS Turn-Off Delay Time t d(off) 20 24 nS Turn-Off Fall Time t f V DD =-10V,I D =-2A V GS =-4.5V,R GEN =2Ω 6 7.2 nS Total Gate Charge Q g 5.5 6.6 nC Gate-Source Charge Q gs 1.0 1.2 nC Gate-Drain Charge Q gd V DS =-10V,I D =-2A, V GS =-4.5V 1.5 1.8 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.1 DFN2X2-6L PACKAGE INFORMATION Dimensions In Millimeters(mm) Symbol Min. Nom. Max. A 0.70 0.75 0.80 0.00 -- 0.05 0.20 REF. D 1.95 2.00 2.05 E 1.95 2.00 2.05 0.44 0.59 0.69 0.84 0.99 1.09 b 0.25 0.30 0.35 L 0.175 0.275 0.375 e
0.65 BSC
NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Top View Bottom View Side View