SSFM8005 SILIKRON | Alldatasheet

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Main Product Characteristics: VDSS 80V RDS(on) 4.5mohm ID 180A www.silikron.com F e a t u r e s a n d B e n e f i t s : TO-220AB TO-220AB „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature Description: It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 180 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 135 IDM Pulsed Drain Current② 500 ISM Pulsed Source Current (Body Diode)② 500 A PD @TC = 25°C Power Dissipation③ 346 W PD @TC =100°C Power Dissipation③ 178 W VDS Drain-Source Voltage 80 V VGS Gate-to-Source Voltage ± 25 V EAS Single Pulse Avalanche Energy @ L=0.1mH② 450 mJ IAR Avalanche Current @ L=0.1mH② 95 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Symbol Characterizes Value Unit RθJC Junction-to-case③ 0.34 ℃/W Junction-to-ambient (t ≤ 10s) ④ 12 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ 55 ℃/W

www.silikron.com Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max Units Conditions BVDSS Drain-to-Source breakdown voltage — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 4.5 5 mΩ VGS = 10V, ID = 20A VGS(th) Gate threshold voltage 2 3 4 V VDS = VGS, ID = 250μA — — 10 VDS = 80V, VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA VDS =80V, VGS = 0V, TJ = 55°C Gate-to-Source forward leakage — — 100 VGS =25V IGSS Gate-to-Source reverse leakage -100 — — nA VGS = -25V gFS Forward Transconductance 37 S VDS=5V, ID=20A Qg Total gate charge — 96 120 Qgs Gate-to-Source charge — 29 36 Qgd Gate-to-Drain("Miller") charge — 27 36 Qg(th) Gate charge at shreshold — 18 24 nC Vplateau gate plateau voltage — 5.28 6.2 V VGS=10V, VDS=40V, ID=20A td(on) Turn-on delay time — 24.8 — tr Rise time — 12.2 — td(off) Turn-Off delay time — 88 — tf Fall time — 34 — ns VGS=10V, VDS=40V, RL=15Ω, RGEN=2.5Ω Ciss Input capacitance — 6286 — Coss Output capacitance — 670 — Crss Reverse transfer capacitance — 204 — pF VGS=0V, VDS=40V, f=1MHz Rg Gate resistance — 0.5 Ω VGS=0V, VDS=0V, f=1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max Units Conditions IS Maximum Body-Diode Continuous Curren 180 A VSD Diode Forward Voltage — 0.63 1 V IS=1A, VGS=0V trr Reverse Recovery Time — 41 — ns Qrr Reverse Recovery Charge — 65 — nC IF=20A, dI/dt=100A/μs ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.silikron.com Notes: ①The maximum current rating is limited by bond-wires. Repetitive rating; pulse② width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. ⑥ The maximum current rating is limited by bond-wires.

Mechanical Data： TO220 www.silikron.com