SSFM3008 SILIKRON | Alldatasheet

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Main Product Characteristics: SSFM3008 SSFM3008 VDSS 30V RDS(on) 5.0mohm(typ.) ID 50A Marking and pin Assignment Schematic diagram TO252 Features and Benefits: „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature Description: It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 50 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 40 IDM Pulsed Drain Current② 200 A Power Dissipation③ 100 W PD @TC = 25°C Linear Derating Factor 0.55 W/°C VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.1mH 100 mJ IAS Avalanche Current @ L=0.1mH 44 A TJ T STG Operating Junction and Storage Temperature Range -55 to + 175 °C www.silikron.com

Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 1.5 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 45 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 20 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 30 36.5 — V VGS = 0V, ID = 250μA — 5 8 mΩ VGS=10V,ID =20A RDS(on) Static Drain-to-Source on-resistance — 7.5 10 mΩ VGS=4.5V,ID =10A VGS(th) Gate threshold voltage 1 — 3 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 10 μA VDS = 30V,VGS = 0V — — 100 VGS =20V IGSS Gate-to-Source forward leakage -100 — — nA VGS = -20V Qg Total gate charge — 36 — Qgs Gate-to-Source charge — 6.1 — Qgd Gate-to-Drain("Miller") charge — 9.6 — nC VDS=15V, ID=20A, VGS=10V td(on) Turn-on delay time — 10.9 — tr Rise time — 46.5 — td(off) Turn-Off delay time — 27.5 — tf Fall time — 7.1 — ns VGS=10V, VDS=15V, RGEN=3Ω, ID=20A Ciss Input capacitance — 1862 — Coss Output capacitance — 360 — Crss Reverse transfer capacitance — 235 — pF VGS = 0V VDS = 15V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current — — 50 A ISM Pulsed Source Current — — 200 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.65 1.3 V IS=1.0A, VGS=0V trr Reverse Recovery Time — 24 — ns Qrr Reverse Recovery Charge — 26 — nC TJ = 25°C, I F =20A, di/dt = 350A/μs www.silikron.com

Test circuits and Waveforms www.silikron.com Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.

Mechanical Data： www.silikron.com

www.silikron.com Ordering and Marking Information Device Marking: SSFM3008 Package (Available) TO252 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 80 50 4000 10 40000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) TJ=125℃ to 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices

www.silikron.com ATTENTION: ■ Any and all Silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures t hat result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high- quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support: Technical@silikron.com Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P. R . China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com