SSFM3008 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 50 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 40 I DM Pulsed Drain Current② 200 A Power Dissipation③ 100 W P D @TC = 25°C Linear Derating Factor 0.55 W/°C V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy @ L=0.1mH 100 mJ I AS Avalanche Current @ L=0.1mH 44 A T J T STG Operating Junction and Storage Temperature Range -55 to + 175 °C V DSS 30V R DS (on) 5.0mohm(typ.) I D 50A Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. SSFM3008 SSFM3008

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 1.5 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 45 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 30 36.5 — V V GS = 0V, ID = 250μA — 5 8 mΩ V GS =10V,I D =20A R DS(on) Static Drain-to-Source on-resistance — 7.5 10 mΩ V GS =4.5V,I D =10A V GS(th) Gate threshold voltage 1 — 3 V V DS = V GS , I D = 250μA I DSS Drain-to-Source leakage current — — 10 μA V DS = 30V,V GS = 0V 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V Q g Total gate charge — 36 — Q gs Gate-to-Source charge — 6.1 — Q gd Gate-to-Drain("Miller") charge — 9.6 — nC V DS =15V, I D =20A, V GS =10V t d(on) Turn-on delay time — 10.9 — t r Rise time — 46.5 — t d(off) Turn-Off delay time — 27.5 — t f Fall time — 7.1 — ns V GS =10V, VDS=15V, R GEN =3Ω, I D =20A C iss Input capacitance — 1862 — C oss Output capacitance — 360 — C rss Reverse transfer capacitance — 235 — pF V GS = 0V V DS = 15V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current — — 50 A I SM Pulsed Source Current — — 200 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.65 1.3 V I S =1.0A, V GS =0V t rr Reverse Recovery Time — 24 — ns Q rr Reverse Recovery Charge — 26 — nC T J = 25°C, I F =20A, di/dt = 350A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C.

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSFM3008 Package (Available) TO-252 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 80 50 4000 10 40000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T J =125℃ to 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices