SSFM2506 GOOD-ARK | Alldatasheet
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Technical content
www.goodark.com Page 1 of 7 Rev.1.2 Main Product Characteristics: V DSS 25V R DS (on) 4.1mohm(typ.) I D 60A Features and Benefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current 130 ISM Pulsed Source Current (Body Diode) 130 A PD @TC = 25°C Power Dissipation 45 W PD @TC =100°C Power Dissipation 22 W VDS Drain-Source Voltage 25 V VGS Gate-to-Source Voltage ± 20 V dv/dt Peak diode recovery voltage 1.5 V/nS EAS Single Pulse Avalanche Energy @ L=0.1mH EAR Repetitive avalanche energy 228 mJ IAR Avalanche Current @ L=0.1mH 42 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Marking and pin Assignment Schematic diagram Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ℃ operating temperature Lead Free Product It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications.
www.goodark.com Page 2 of 7 Rev.1.2 Thermal Resistance Symbol Characterizes Value Unit R θJC Junction-to-case ③ 2.5 ℃/W Junction-to-ambient (t ≤ 10s) 13 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) 36 ℃/W Electrical Characterizes A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source breakdown voltage 25 — — V VGS = 0V, ID = 250μA — 4.1 6 RDS(on) Static Drain-to-Source on-resistance — 6.5 — mΩ VGS=10V ID = 30A TJ = 125℃ 1.2 1.9 2.5 VGS(th) Gate threshold voltage — 1.2 — V VDS = VGS, ID = 250μA TJ = 125℃ — — 10 VDS = 25V, VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA VDS = 25V, VGS = 0V, TJ = 55°C Gate-to-Source forward leakage
100 VGS =20V
-100 nA VGS = -20V Qg Total gate charge — 35.8 Qgs Gate-to-Source charge — 3.8 Qgd Gate-to-Drain("Miller") charge 13.1 nC ID = 30A, VDS=12.5V, VGS = 10V td(on) Turn-on delay time — 10.5 tr Rise time — 65.7 td(off) Turn-Off delay time — 27.0 tf Fall time — 8.2 ns VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω Ciss Input capacitance — 1732 Coss Output capacitance — 512 Crss Reverse transfer capacitance 323 pF VGS = 0V, VDS = 12.5V, ƒ = 1.0MHz Rg Gate resistance — 1.4 — Ω VGS=0V,VDS=0V, f=1MHz
www.goodark.com Page 3 of 7 Rev.1.2 Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Maximum Body-Diode Continuous Curren — 60 — A VSD Diode Forward Voltage — 0.69 1 V IS=1A, VGS=0V trr Reverse Recovery Time — 18.3 — ns Qrr Reverse Recovery Charge — 6.4 — nC TJ = 25°C, IF =30A, di/dt = 150A/μs Test Circuits and Waveforms Switch Waveforms:
www.goodark.com Page 7 of 7 Rev.1.2 Mechanical Data：