SSFM1022 SILIKRON | Alldatasheet
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Main Product Characteristics: VDSS 100V RDS(on) 19mohm ID 40A SSFT3906SSFM1022 SSFT3906SSFM1022 www.silikron.com F e a t u r e s a n d B e n e f i t s : TO220 Schematic diagram Marking and pin Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Description: It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve extremely low on resistance, fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 40 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 36 IDM Pulsed Drain Current② 160 ISM Pulsed Source Current (Body Diode)② 160 A PD @TC = 25°C Power Dissipation③ 3.2 W PD @TC =100°C Power Dissipation③ 2 W VDS Drain-Source Voltage 100 V VGS Gate-to-Source Voltage ± 25 V EAS Single Pulse Avalanche Energy @ L=0.1mH② 42 mJ IAR Avalanche Current @ L=0.1mH② 29 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Symbol Characterizes Value Unit RθJC Junction-to-case③ 16 ℃/W Junction-to-ambient (t ≤ 10s) ④ 32 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ 60 ℃/W
www.silikron.com Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max Units Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 19 22 mΩ VGS = 10V, ID = 8A VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — — 10 VDS = 100V, VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA VDS = 100V, VGS = 0V, TJ = 55°C Gate-to-Source forward leakage — — 100 VGS =25V IGSS Gate-to-Source reverse leakage -100 — — nA VGS = -25V Qg Total gate charge — 26.4 35 Qgs Gate-to-Source charge — 9.18 15 Qgd Gate-to-Drain("Miller") charge — 6.91 10 Qg(th) Gate charge at shreshold — 5.78 8 nC Vplateau gate plateau voltage — 5.48 8 V VGS=10V, VDS=50V, ID=8A td(on) Turn-on delay time — 10.6 — tr Rise time — 3.8 — td(off) Turn-Off delay time — 16 — tf Fall time — 6 — ns VGS=10V, VDS=50V, RL=6Ω, RGEN=3Ω Ciss Input capacitance — 1596 — Coss Output capacitance — 249 — Crss Reverse transfer capacitance — 77 — pF VGS=0V, VDS=50V, f=1MHz Rg Gate resistance — Ω VGS=0V, VDS=0V, f=1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max Uni ts Conditions IS Maximum Body-Diode Continuous Current 40 A VSD Diode Forward Voltage — 0.65 1 V IS=1A, VGS=0V trr Reverse Recovery Time — 32 — ns Qrr Reverse Recovery Charge — 48 — nC IF=8A, dI/dt=100A/μs ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.silikron.com 0.001 0.01 0.1 Pulse Width (s) ZθJA,Transient Thermal Resistance( Normalized ) Duty cycle D=T1/T, RθJA=60℃/W Duty cycle D=0.5,0.3,0.1, 0.05,0.01,single Figure 12: Normalized Maximum Transient Thermal Impedance (⑥)
www.silikron.com Notes: ①The maximum current rating is limited by bond-wires. Repetitive rating; pulse width limited by max. junction temperature.② ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
Mechanical Data： Min Nom Max Min Nom Max b 0.770 - 0.900 0.030 - 0.035 b2 1.230 - 1.360 0.048 - 0.054 D 15.100 15.400 15.700 - 0.606 - e ϴ1 50 70 90 50 70 90 ϴ2 10 30 50 10 30 50 0.073REF 5.08BSC 0.2BSC Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC 1.85REF TO220 PACKAGE OUTLINE DIMENSION www.silikron.com
www.silikron.com Ordering and Marking Information Device Marking: SSFM1022 Package (Available) TO220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TO220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=150℃ or 175 ℃ @ 80% of Max V DSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=150℃ or 175 ℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices
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