SSFD6035U SILIKRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 8
Technical content
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.2 page 1 of 8 MainProductCharacteristics: MainFeatures
Description
Symbol Parameter Max. Units ID@TC =25°C ContinuousDrainCurrent,VGS @ 10V① -26 A IDM PulsedDrainCurrent② -60 PD @TC =25°C PowerDissipation③ 60 W VDS Drain-SourceVoltage -60 V VGS Gate-to-SourceVoltage ±20 V EAS SinglePulseAvalancheEnergy@L=0.5mH 125 mJ TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 2.0 ℃/W VDSS -60V RDS(on) 23mΩ ID -26A MarkingandPin Assignments SchematicDiagram AdvancedMOSFETprocesstechnology SpecialdesignforPWM,loadswitchingetc Ultra-lowRdsontogetherwithlowgatecharge Fastswitchandbody-diodetrr 150℃ operatingtemperature It utilizes the optimized chip design to balance the high density and the low on-resistance with high repetitive avalancheperformanceimprovement.Basedonitsexcellentefficiencyandreliability,theproductcouldbeusedin powerinvert,rectifying,energystorageandotherapplicationarea. TO-252(DPAK)
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.2 page 2 of 8 Electrical Characteristics @TA=25℃unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage -60 — — V VGS =0V,ID =-250μA RDS(on) StaticDrain-to-Sourceon-resistance — 23 30 mΩ VGS=-10V,ID=-18A — 29 40 VGS=-4.5V,ID=-10A VGS(th) Gatethresholdvoltage -1 — -2.5 V VDS =VGS,ID =-250μA IDSS Drain-to-Sourceleakagecurrent — — -1 μA VDS =-60V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =20V — — -100 VGS =-20V Qg Totalgatecharge — 48 — nC VDS=-30V ID=-20A VGS=-10V Qgs Gate-to-Sourcecharge — 11 — Qgd Gate-to-Drain("Miller")charge — 10 — td(on) Turn-ondelaytime — 27 — ns VDS=-30V VGS=-10V RGEN=3Ω ID=-1A tr Risetime — 31 — td(off) Turn-Offdelaytime — 60 — tf Falltime — 33 — Ciss Inputcapacitance — 3010 — pF VGS =0V VDS =-30V ƒ=1MHz Coss Outputcapacitance — 150 — Crss Reversetransfercapacitance — 128 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — -26 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — -60 A VSD DiodeForwardVoltage — — -1.2 V IS=-1A,VGS=0V trr ReverseRecoveryTime — 40 — ns IS=-20A,di/dt=100A/us Qrr ReverseRecoveryCharge — 56 — nC
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.2 page 3 of 8 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: 1 Calculatedcontinuous currentbased onmaximum allowable junction temperature. ② Repetitive rating;pulsewidth limitedby max.junction temperature. ③ Thepower dissipation PDis basedon max.junction temperature, usingjunction-to-casethermal resistance.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.2 page 6 of 8 Mechanical Data： Option 1.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.2 page 7 of 8 Option 2 .
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.2 page 8 of 8 ATTENTION: ■ AnyandallSilikronproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplications thatrequireextremelyhighlevelsofreliability,suchaslife-supportsystems,aircraft'scontrolsystems,orother applicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage. ConsultwithyourSilikronrepresentativenearestyou beforeusinganySilikronproductsdescribedorcontained hereininsuchapplications. ■ Silikronassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed, evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listed inproductsspecificationsofanyandallSilikronproductsdescribedorcontainedherein. ■ SpecificationsofanyandallSilikronproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomer shouldalwaysevaluateandtestdevicesmountedinthecustomer’sproductsorequipment. ■ SilikronMicroelectronics(Suzhou)Co.,Ltd.strivestosupplyhigh-qualityhigh-reliabilityproducts.However,anyand allsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverise to accidentsoreventsthatcouldendangerhumanlives,thatcouldgiverisetosmokeorfire,orthatcouldcause damagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsor eventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsfor safedesign,redundantdesign,andstructuraldesign. ■ IntheeventthatanyorallSilikronproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexported withoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. ■ Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofSilikronMicroelectronics(Suzhou)Co.,Ltd. ■ Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction.Silikronbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. ■ Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticedueto product/technologyimprovement,etc.Whendesigningequipment,refertothe"DeliverySpecification"forthe Silikronproductthatyouintendtouse.