SSFD6035 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
www.goodark.com Page 1 of 6 Rev.2.0 SSF D 60V P-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFD6035 SSFD6035 DPAK - - - ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ±20 V I D (25 -26 A I D (70 -20 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -60 A Maximum Power Dissipation P D 60 W Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 25 ℃/W ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -60 V GENERAL FEATURES
- V DS =- 60V,I D =-26A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSFD6035 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
APPLICATIONS
- PWM applications
- Load switch
- Power management Schematic D iagram Marking and P in Assignment D G S SSFD6035 Top View
www.goodark.com Page 2 of 6 Rev.2.0 SSF D 60V P-Channel MOSFET Zero Gate Voltage Drain Current I DSS V DS =-48V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -1 -1.8 -2.5 V V GS =-10V, I D =-20A 31 40 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-20A 42 55 mΩ Forward Transconductance g FS V DS =-5V,I D =-20A 5 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 3060 PF Output Capacitance C oss 300 PF Reverse Transfer Capacitance C rss V DS =-30V,V GS =0V, F=1.0MHz 205 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 14 nS Turn-on Rise Time t r 20 nS Turn-Off Delay Time t d(off) 40 nS Turn-Off Fall Time t f V DS =-30V,V GS =-10V,R GEN =3Ω I D =1A 19 nS Total Gate Charge Q g 48 nC Gate-Source Charge Q gs 11 nC Gate-Drain Charge Q gd V DS =-30V,I D =-20A,V GS =-10V 10 nC Body Diode Reverse Recovery Time T rr 40 nS Body Diode Reverse Recovery Charge Q rr I F =-20A, dI/dt=100A/µs 56 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A -0.72 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 6 of 6 Rev.2.0 SSF D 60V P-Channel MOSFET DPAK PACKAGE INFORMATION NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters UNIT: mm