SSFD4031L

SSFD4031L SILIKRON | Alldatasheet

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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 1 of 5 MainProductCharacteristics: FeaturesandBenefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID@TC =25℃ ContinuousDrainCurrent,VGS @ 10V① -40 AID @TC =100℃ ContinuousDrainCurrent,VGS @ 10V① -23 IDM PulsedDrainCurrent② -120 PD @TC =25℃ PowerDissipation③ 25 W PD @TA =25℃ PowerDissipation③ 16 VDS Drain-SourceVoltage -40 V VGS Gate-to-SourceVoltage ±20 V EAS SinglePulseAvalancheEnergy@L=0.1mH 125 mJ TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 ℃ VDSS -40V RDS(on) 15mΩ(typ.) ID -40A Pin Assignments SchematicDiagramTO-252  AdvancedMOSFETprocesstechnology  Special designed for PWM, load switching and generalpurposeapplications  Ultralowon-resistancewithlowgatecharge  Fastswitchingandreversebodyrecovery  100%AvalancheRated It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistancewithhighrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremely efficientandreliabledeviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 2 of 5 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 5 ℃/W RθJA Junction-to-ambient(t ≤ 10s)④ — 62 ℃/W Electrical Characterizes@TA=25℃unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage -40 — — V VGS =0V,ID =-250μA RDS(on) StaticDrain-to-Sourceon-resistance — 15 18 mΩ VGS=-10V,ID =-30A — 18 25 mΩ VGS=-4.5V,ID =-20A VGS(th) Gatethresholdvoltage -1 — -2.5 V VDS =VGS,ID =-250μA IDSS Drain-to-Sourceleakagecurrent — — -1 μA VDS =-40V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =20V — — -100 VGS =-20V Qg Totalgatecharge — 25 — nC ID =-12A, VDS=-20V, VGS =-4.5V Qgs Gate-to-Sourcecharge — 11 — Qgd Gate-to-Drain("Miller")charge — 9.5 — td(on) Turn-ondelaytime — 47 — ns VGEN=-10V,VDD=-15V, RGEN=6Ω RL=15Ω ID =-1A tr Risetime — 23 — td(off) Turn-Offdelaytime — 86 — tf Falltime — 9.2 — Ciss Inputcapacitance — 2760 — pF VGS =0V VDS =-20V ƒ=1MHz Coss Outputcapacitance — 259 — Crss Reversetransfercapacitance — 83 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode)① — — -40 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — -90 A VSD DiodeForwardVoltage — — -1.3 V IS=-1A,VGS=0V

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 3 of 5 Test circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PDisbased onmax. junctiontemperature, usingjunction-to-casethermal resistance. ④Thevalue ofRθJA is measuredwith the devicemounted on 1in2FR-4 board with 2oz. Copper,in a still airenvironmentwith TA =25°C

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 4 of 5 Mechanical Data：

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