SSFD4024 SILIKRON | Alldatasheet
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M a i n P r o d u c t C h a r a c t e r i s t i c s : VDSS 40V RDS(on) 30 mohm ID 12A TO-252 top view SSFD4024 Features and Benefits: Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175℃ operating temperature Marking and pin Assignment Description: It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Absolute max Rating: Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 IDM Pulsed Drain Current① 30 A PD @TC = 25°C Power Dissipation 20 W VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy② 22 mJ IAR Avalanche Current @ L=0.3mH 10 A TJ TSTG Operating Junction and St orage Temperature Range -55 to + 175 °C Thermal Resistance Symbol Characterizes Value Unit RθJC Junction-to-case 7.5 ℃/W Junction-to-ambient 30 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) 60 ℃/W www.silikron.com
Electrical Characterizes @TA=25℃ unless otherwise specified Parameter Min. Typ. Max Units Conditions BVDSS Drain-to-Source breakdown voltage 40 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 24 30 mΩ VGS = 10V, ID = 12A③ VGS(th) Gate threshold voltage 1 — 3 V VDS = VGS, ID = 250μA — — 1 VDS = 40V, VGS = 0V IDSS Drain-to-Source leakage current — — 150 μA VDS = 40V, VGS = 0V, TJ = 125°C Gate-to-Source forward leakage — — 100 VGS = 20V IGSS Gate-to-Source reverse leakage — — -100 nA VGS = -20V Qg Total gate charge — 9.5 — Qgs Gate-to-Source charge — 4.5 — Qgd Gate-to-Drain("Miller") charge — 1.5 — nC ID = 12A VDS =20V VGS = 10V③ td(on) Turn-on delay time — 3.5 — tr Rise time — 6 — td(off) Turn-Off delay time — 13.5 — tf Fall time — 3.5 — ns VDD = 20V ID = 12A RG = 1.7 Ω VGS = 10V③ Ciss Input capacitance — 410 — Coss Output capacitance — 95 — Crss Reverse transfer capacitance — 35 — pF VGS = 0V VDS = 20V ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max Units Conditions IS Continuous Source Current (Body Diode) — — 12 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.75 1.0 V TJ = 25°C, IF = 1A, VDD = 20V di/dt = 100A/μs③ trr Reverse Recovery Time — 23 — ns Qrr Reverse Recovery Charge — 18.5 — nC TJ = 25°C, IF = 12A, VDD = 20V di/dt = 100A/μs③ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.silikron.com
www.silikron.com Notes: Repetitive rating; pulse width limited by max. junction temperature. ① Limited by TJmax, starting TJ = 25°C, L = 0.② 3mH RG =50Ω, IAS = 82A, VGS =10V. Part not recommended for use above this value. Pulse width < 1.0ms; duty cycle<2%.③
Mechanical Data： TO-252E-2-M PACKAGE INFORMATION Dimensions in Millimeters www.silikron.com NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.