SSFD4004 GOOD-ARK | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 145 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 100 I DM Pulsed Drain Current 580 A Power Dissipation 153 W P D @TC = 25°C Linear Derating Factor 1.02 W/°C V DS Drain-Source Voltage 40 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy @ L=0.1mH 281.3 mJ I AS Avalanche Current @ L=0.1mH 75 A T J T STG Operating Junction and Storage Temperature Range -55 to + 175 °C V DSS 40V R DS (on) 3.2mohm(typ.) I D 145A TO-252 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 0.98 ℃/W Junction-to-ambient (t ≤ 10s) — 62 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 40 — — V V GS = 0V, I D = 250μA — 3.2 4 V GS =10V,I D = 30A R DS(on) Static Drain-to-Source on-resistance — 6.17 — mΩ T J = 125°C 1 — 3 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 1.11 — V T J = 125°C — — 1 V DS = 40V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V Q g Total gate charge — 52.3 — Q gs Gate-to-Source charge — 20.3 — Q gd Gate-to-Drain("Miller") charge — 23.1 — nC I D = 20A, V DS =15V, V GS = 4.5V t d(on) Turn-on delay time — 15.9 — t r Rise time — 49.0 — t d(off) Turn-Off delay time — 61.6 — t f Fall time — 25.6 — nS V GS =10V, V DS =15V, R L =0.75Ω, R GEN =3Ω I D =20A C iss Input capacitance — 6653 — C oss Output capacitance — 632 — C rss Reverse transfer capacitance — 603 — pF V GS = 0V V DS = 15V ƒ =1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 145 A I SM Pulsed Source Current (Body Diode) — — 580 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.72 1.2 V I S =2.1A, V GS =0V t rr Reverse Recovery Time — 30.8 — nS Q rr Reverse Recovery Charge — 31.1 — nC T J = 25°C, I F =20A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C.

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max K 5.350 (REF) 2.900 (REF) 1.600 (REF) (REF) 8 (REF) 0.063 (REF) 0.211 (REF) 0.114 (REF) Symbol Dimension In Millimeters Dimension In Inches 4.83 (REF) 0.190 (REF) DPAK PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSFD4004 Package (Available) DPAK（TO-252） Operating Temperature Range C : -55 to 175 ºC Devices per Unit Option1 Tapes/Inner Units/Inner Inner Units/Carton Box Box Boxes/Carton Box Box TO-252 2500 5000 35000 Option2 Tapes/Inner Units/Inner Inner Units/Carton Box Box Boxes/Carton Box Box TO-252 2500 2500 25000 Package Type Units/Tape Package Type Units/Tape Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices