SSFD3006

SSFD3006 SILIKRON | Alldatasheet

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Main Product Characteristics: SSF3612D SSF3612DSSFD3006 SSF3612D SSF3612DSSFD3006 VDSS 30V RDS(on) 3.8mΩ (typ.) ID 90A www.silikron.com TO-252 (D-PAK) Schematic diagram Marking and pin Assignment Features and Benefits: „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ High Power and current handing capability „ 175℃ operating temperature Description: It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 90 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 66 IDM Pulsed Drain Current② 360 ISM Pulsed Source Current (Body Diode)② 360 A PD @TC = 25°C Power Dissipation③ 75 W PD @TC =100°C Power Dissipation③ 78 W VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V dv/dt Peak diode recovery voltage 1.5 V/nS EAS Single Pulse Avalanche Energy @ L=0.1mH 90 mJ IAS Avalanche Current @ L=0.1mH 42 A TJ T STG Operating Junction and Storage Te mperature Range -55 to + 175 °C

www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 2 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 100 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 50 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 30 — — V VGS = 0V, ID = 250μA — 3.8 6 VGS=10V,ID = 15A — 6.4 — TJ = 125℃ — 4.9 8.5 VGS=4.5V,ID =11.5A RDS(on) Static Drain-to-Source on-resistance — 7.2 — mΩ TJ = 125℃ 1 1.5 3 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 1.21 — V TJ = 125℃ — — 1 VDS = 30V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125°C — — 100 VGS =20V IGSS Gate-to-Source forward leakage -100 — — nA VGS = -20V Qg Total gate charge — 35 — Qgs Gate-to-Source charge — 8 — Qgd Gate-to-Drain("Miller") charge — 18 — nC ID = 32A, VDS=15V, VGS =4.5V td(on) Turn-on delay time — 12 — tr Rise time — 63 — td(off) Turn-Off delay time — 41 — tf Fall time — 11 — ns VGS=4.5V, VDS=15V, RGEN=2Ω，ID = 32A, Ciss Input capacitance — 3833 — Coss Output capacitance — 459 — Crss Reverse transfer capacitance — 427 — pF VGS = 0V VDS = 15V ƒ = 800kHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Maximum Body-Diode Continuous Curren — — 90 A VSD Diode Forward Voltage — 0.72 1.2 V IS=2.8A, VGS=0V trr Reverse Recovery Time — 16 — ns Qrr Reverse Recovery Charge — 8.8 — nC TJ = 25°C, IF =30A, di/dt = 150A/μs

Test circuits and Waveforms www.silikron.com Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.

Typical electrical and thermal characteristics ZthJA Normalized T ransient Figure 6: Normalized Maximum Transient Thermal Impedance⑥ www.silikron.com

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Ordering and Marking Information Device Marking: SSFD3006 Package (Available) TO-252 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Option1： Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 80 50 4000 10 40000 Option2： Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 2500 2 5000 7 35000 Option3： Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 2500 1 2500 10 25000 www.silikron.com

www.silikron.com ATTENTION: ■ Any and all Silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures t hat result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high- quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support: Technical@silikron.com Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P. R . China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com