SSFD3006 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics V DSS 30V R DS (on) 3.8mΩ (typ.) I D 90A Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, VGS @ 10V I D @ TC = 100°C Continuous Drain Current, VGS @ 10V I DM Pulsed Drain Current 360 I SM Pulsed Source Current (Body Diode) 360 A P D @TC = 25°C Power Dissipation 75 W P D @TC =100°C Power Dissipation 78 W V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 20 V dv/dt Peak diode recovery voltage 1.5 V/nS E AS Single Pulse Avalanche Energy @ L=0.1mH 90 mJ I AS Avalanche Current @ L=0.1mH 42 A T J T STG Operating Junction and Storage Temperature Range -55 to + 175 °C TO-252 (D-P AK) Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  High Power and current handing capability  175 ℃ operating temperature  Lead free product It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications. SSF3612D SSF3612D SSFD3006 SSF3612D SSF3612D SSFD3006

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 2 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 100 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 30 — — V V GS = 0V, ID = 250μA — 3.8 6 V GS =10V,I D = 15A — 6.4 — T J = 125℃ 4.9 8.5 V GS =4.5V,I D =11.5A R DS(on) Static Drain-to-Source on-resistance 7.2 — mΩ T J = 125℃ 1 1.5 3 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 1.21 — V T J = 125℃ — — 1 V DS = 30V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V Q g Total gate charge — 35 — Q gs Gate-to-Source charge — 8 — Q gd Gate-to-Drain("Miller") charge 18 — nC I D = 32A, V DS =15V, V GS =4.5V t d(on) Turn-on delay time — 12 — t r Rise time — 63 — t d(off) Turn-Off delay time — 41 — t f Fall time — 11 — ns V GS =4.5V, VDS=15V, R GEN =2Ω，I D = 32A, C iss Input capacitance — 3833 C oss Output capacitance — 459 — C rss Reverse transfer capacitance — 427 — pF V GS = 0V V DS = 15V ƒ = 800kHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Maximum Body-Diode Continuous Curren — — 90 A V SD Diode Forward Voltage — 0.72 1.2 V I S =2.8A, V GS =0V t rr Reverse Recovery Time — 16 — ns Q rr Reverse Recovery Charge — 8.8 — nC T J = 25°C, I F =30A, di/dt = 150A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C.

www.goodark.com Page 5 of 7 Rev.1.0 Typical Electrical and Thermal Characteristics Z thJA Normalized Transient Thermal Resistance Figure 6: Normalized Maximum Transient Thermal Impedance⑥ Vsd Source-Drain Voltage (V) I s - Reverse Drain Current (A)

www.goodark.com Page 6 of 7 Rev.1.0

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSFD3006 Package (Available) TO-252 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Option1： Packag e Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 80 50 4000 10 40000 Option2： Packag e Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 2500 2 5000 7 35000 Option3： Packag e Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-252 2500 1 2500 10 25000