SSFD3004 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
www.goodark.com Page 1 of 6 Rev.2.0 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFD3004 SSFD3004 TO-252E-2-M - - - ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V I D (25 55 A I D (70 46 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 100 A Avalanche Current@L=0.3mH IAR 60 A Single Pulse Avalanche Energy(NOTE 5) EAS 500 mJ Maximum Power Dissipation P D 50 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 41 ℃/W GENERAL FEATURES
- V DS = 30V,I D =55A R DS(ON) < 9.5mΩ @ V GS =4.5V R DS(ON) < 5.5mΩ @ V GS =10V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSFD3004 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
APPLICATIONS
- PWM applications
- Load switch
- Power management Schematic D iagram Marking and P in Assignment TO 252E M T op V iew D G S
www.goodark.com Page 2 of 6 Rev.2.0 ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1 1.8 2.5 V V GS =4.5V, I D =20A 7.5 9.5 mΩ Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =30A 4.4 5.5 mΩ Forward Transconductance g FS V DS =5V,I D =30A 25 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 1800 PF Output Capacitance C oss 450 PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz 300 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 8 nS Turn-on Rise Time t r 10 nS Turn-Off Delay Time t d(off) 30 nS Turn-Off Fall Time t f V DS =15V,V GS =10V,R GEN =3Ω I D =1A 9 nS Total Gate Charge Q g 30 nC Gate-Source Charge Q gs 5 nC Gate-Drain Charge Q gd V DS =15V,I D =10A,V GS =10V 9 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A 0.7 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Limited by TJmax, starting TJ = 25°C, L = 0.3mH RG =50Ω, IAS = 50A, VGS =10V. Part not recommended for use above this value
www.goodark.com Page 6 of 6 Rev.2.0 TO-252E-2-M PACKAGE INFORMATION NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Milli meters UNIT: mm