SSF9926 GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 4 Rev.1.1 SSF 9926 20V Dual N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF9926 SSF9926 SOP-8 Ø330mm 12mm 2500 units ABSOLUTE MAXIMUM RATINGS(T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V I D 6 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 24 A Maximum Power Dissipation P D 2 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 62.5 ℃/W GENERAL FEATURES
- V DS = 20V,I D =6A R DS(ON) < 44mΩ @ V GS =2.5V R DS(ON) < 28mΩ @ V GS =4.5V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF9926 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
APPLICATIONS
- PWM applications
- Load switch
- Power management Schematic D iagram Marking and P in Assignment S OP T op V iew
www.goodark.com Page 2 of 4 Rev.1.1 SSF 9926 20V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.6 0.75 1 V V GS =4.5V, I D =6A 22.5 28 mΩ Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =5.2A 32 44 mΩ Forward Transconductance g FS V DS =5V,I D =4.5A 18 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 550 PF Output Capacitance C oss 140 PF Reverse Transfer Capacitance C rss V DS =8V,V GS =0V, F=1.0MHz 120 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 9.6 nS Turn-on Rise Time t r 6.5 nS Turn-Off Delay Time t d(off) 28 nS Turn-Off Fall Time t f V DS =10V,V GS =4.5V,R GEN =6Ω I D =1A 6 nS Total Gate Charge Q g 6 nC Gate-Source Charge Q gs 1.5 nC Gate-Drain Charge Q gd V DS =10V,I D =3A,V GS =4.5V 1.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.7A 1 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.1 SSF 9926 20V Dual N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact.