SSF8N60 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
www.goodark.com Page 1 of 7 Rev.2.1
FEATURES
Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Lead free product
DESCRIPTION
The SSF8N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
APPLICATIONS
High current, high speed switching Ideal for off-line power supply, adaptor, PFC Absolute Maximum Ratings Parameter Max. Units C Continuous Drain Current,VGS@10V 8.2 C Continuous Drain Current,VGS@10V 5.5 IDM Pulsed Drain Current 32.8 A Power Dissipation 145 W C C VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 586 mJ IAR Avalanche Current 4 A EAR Repetitive Avalanche Energy 15 mJ dv/dt Peak Diode Recovery dv/dt
4.5 V/ns
C Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — — 0.86 RθCS Case-to-Sink,Flat,Greased Surface — 0.50 — RθJA Junction-to-Ambient — — 62.5 C/W VDSS = 600V ID = 8A Rdson = 0.85Ω (typ.) SSF8N60 TOP View (TO220)
www.goodark.com Page 2 of 7 Rev.2.1 Electrical Characteristics @T J =25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 — — V VGS=0V,ID=250μA V(BR)DSS/△ TJ△ Breakdown Voltage Temp.Coefficient — 0.6 C C,ID=250μA RDS(on) Static Drain-to-Source On-resistance — 0.85 1.1 Ω VGS=10V,ID=3.8A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS,ID=250μA gfs Forward Transconductance — 6.4 — S VDS=40V,ID=3.8A — 1 VDS=600V,VGS=0V IDSS Drain-to-Source Leakage current — 10 uA C Gate-to-Source Forward leakage — — 0.5 VGS=30V IGSS Gate-to-Source Reverse leakage — — -0.5 uA VGS=-30V Qg Total Gate Charge — 28.5 Qgs Gate-to-Source charge — 7 — Qgd Gate-to-Drain("Miller") charge — 14.6 nC ID=7.5 A VDS=48 VGS=10V td(on) Turn-on Delay Time — 29 70 tr Rise Time — 78 160 td(off) Turn-Off Delay Time — 65 130 tf Fall Time — 60 128 nS VDD=300 V ID=7.5 A RG=25Ω Ciss Input Capacitance — 1000 1350 Coss Output Capacitance — 125 165 Crss Reverse Transfer Capacitance — 16 21 pF VGS=0V VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 8.2 ISM Pu lsed Source Current (Body Diode) — — 32.8 A MOSFET symbol showing the integral reverse p-n junction diode. VSD C,IS=7.2A,VGS=0V Trr Reverse Recovery Time — 300 — nS Qrr Reverse Recovery Charge — 1.8 uC C,IF=7.2A di/dt=100A/μs Notes: ① Repetitive rating; pulse width limited by maximum. junction temperature ② L = 23.5mH, IAS =6.5A, VDD = 50V, RG = 25ΩStarting, TJ = 25°C ③ ISD≤4A, di/dt≤200A/μs, VDD≤V(BR)DSS, TJ≤25°C ④ Pulse width≤300μS; duty cycle≤2%
www.goodark.com Page 5 of 7 Rev.2.1 Test Circuit and Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform
www.goodark.com Page 6 of 7 Rev.2.1 TO-220 MECHANICAL DATA
www.goodark.com Page 7 of 7 Rev.2.1