SSF8822 GOOD-ARK | Alldatasheet
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Technical content
www.goodark.com Page 1 of 4 Rev.1.0 SSF 8822 20V Dual N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF8822 SSF8822 TSSOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V I D 7 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 30 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 83 /W℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 V Zero Gate Voltage Drain Current I DSS V DS =16V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V ±100 nA GENERAL FEATURES
- V DS = 20V,I D = 7A R DS(ON) < 21mΩ @ V GS =10V R DS(ON) < 24mΩ @ V GS =4.5V R DS(ON) < 28mΩ @ V GS =3.6V R DS(ON) < 32mΩ @ V GS =2.5V R DS(ON) < 50mΩ @ V GS =1.8V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF8822 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 0.8V. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
APPLICATIONS
- Battery protection
- Load switch
- Power management Schematic Diagram G 1 D 2 G 2 S 2 D 1 Marking and pin Assignment TS SOP T op V iew
www.goodark.com Page 2 of 4 Rev.1.0 SSF 8822 20V Dual N-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =1mA 0.5 0.8 1 V V GS =10V, I D =7A 16.4 V GS =4.5V, I D =6.6A 19 24 V GS =3.6V, I D =6A 21.7 V GS =2.5V, I D =5.5A 25 32 Drain-Source On-State Resistance R DS(ON) V GS =1.8V, I D =2A 36 50 mΩ Forward Transconductance g FS V DS =5V,I D =7A 24 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 630 PF Output Capacitance C oss 160 PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz 135 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 5.7 nS Turn-on Rise Time t r 11.5 nS Turn-Off Delay Time t d(off) 31.5 nS Turn-Off Fall Time t f V DS =10V, R L =1.4Ω V GS =5V,R GEN =3Ω 9.7 nS Total Gate Charge Q g 9.3 nC Gate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd V DS =10V,I D =7A, V GS =4.5V 3.6 nC Body Diode Reverse Recovery Time trr IF=7A, dI/dt=100A/µs 15.2 nS Body Diode Reverse Recovery Charge Qrr IF=7A, dI/dt=100A/µs 6.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A 0.7 1 V Diode Forward Current (Note 2) I S 2.5 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SSF 8822 20V Dual N-Channel MOSFET TSSOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.