SSF8509 SILIKRON | Alldatasheet

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Main Product Characteristics: www.silikron.com Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 80 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 70 IDM Pulsed Drain Current② 320 A Power Dissipation③ 200 W PD @TC = 25°C Linear Derating Factor 2.0 W/°C VDS Drain-Source Voltage 85 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 375 mJ IAS Avalanche Current @ L=0.3mH 50 A TJ T STG Operating Junction and Storage Temperature Range -55 to + 175 °C V DSS 85V RDS(on) 7mohm(typ.) ID 80A Marking and pin Assignment Schematic diagram TO220 „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications

Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 0.75 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 85 — — V VGS = 0V, ID = 250μA — 7 9 VGS=10V,ID = 30A RDS(on) Static Drain-to-Source on-resistance — 12.5 13 mΩ TJ = 125℃ 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 2.35 — V TJ = 125℃ — — 1 VDS = 85V,VGS = 0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125℃ — — 100 V GS =20V IGSS Gate-to-Source forward leakage -100 — — nA VGS = -20V Qg Total gate charge — 93.6 — Qgs Gate-to-Source charge — 20.2 — Qgd Gate-to-Drain("Miller") charge — 33.3 — nC ID = 30A, VDS=30V, VGS = 10V td(on) Turn-on delay time — 17.3 — tr Rise time — 15.2 — td(off) Turn-Off delay time — 52 — tf Fall time — 19 — ns VGS=10V, VDS=30V, RL=15Ω, RGEN=2.5Ω Ciss Input capacitance — 4373 — Coss Output capacitance — 352 — Crss Reverse transfer capacitance — 306 — pF VGS = 0V VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 80 A ISM Pulsed Source Current (Body Diode) — — 320 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.85 1.3 V IS=30A, VGS=0V trr Reverse Recovery Time — 36 — ns Qrr Reverse Recovery Charge — 62 — nC TJ = 25°C, I F =75A, di/dt = 100A/μs www.silikron.com

Test circuits and Waveforms www.silikron.com Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. ⑥ The maximum current rating is limited by bond-wires.

Mechanical Data： Min Nom Max Min Nom Max b 0.770 - 0.900 0.030 - 0.035 b2 1.230 - 1.360 0.048 - 0.054 D 15.100 15.400 15.700 - 0.606 - e □1 50 70 90 50 70 90 □2 10 30 50 10 30 50 0.073REF 5.08BSC 0.2BSC Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC 1.85REF TO220 PACKAGE OUTLINE DIMENSION www.silikron.com

www.silikron.com Ordering and Marking Information Device Marking: SSF8509 Package (Available) TO220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j=125℃ to 175℃ @ 80% of Max V DSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j=150℃ or 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices

www.silikron.com ATTENTION: ■ Any and all Silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures t hat result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high- quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support: Technical@silikron.com Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com