SSF84W SECOS | Alldatasheet
Document overview
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Technical content
-0.13A , -50V , R DS(ON) 10 Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 04-Nov-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 PD W RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.
FEATURES
/circle6 Energy Efficient /circle6 Miniature SOT–323 Surface Mount Package Saves Board Space APPLICATION DC-DC converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. MARKING
PACKAGE INFORMATION
Parameter Symbol Rating Unit Total Device Dissipation FR–5 Board T A=25 °C PD 225 mW Derate above 25 °C 1.8 mW / ° C Maximum Junction–Ambient R θJA 556 ° C / W Total Device Dissipation Alumina Substrate T A=25 °C PD 300 mW Derate above 25 °C 2.4 mW / ° C Maximum Junction–Ambient R θJA 417 ° C / W Junction & Storage Temperature T J, T STG -55 ~ 150 ° C Gate Source Drain REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 SOT-323 W ：： ：：Date Code
-0.13A , -50V , R DS(ON) 10 Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 04-Nov-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. MAXIMUM RATINGS (T J=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source Voltage VDS -50 V Gate – Source Voltage - Continuous V GS ±20 V Continuous Drain Current TA=25° C I D -130 mA Pulsed Drain Current (tp ≤10 µs) IDM -520 Total Power Dissipation T A=25° C P D 225 mW Maximum Lead Temperature for Soldering Purposes, for 10 seconds T L 260 ° C Maximum Junction–Ambient R θJA 556 ° C / W Operating Junction & Storage Temperature Range T J, T STG -55 ~ 150 ° C ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions OFF Characteristics Drain-Source Breakdown Voltage V(BR)DSS -50 - - V V GS =0, I D = -250 µA Gate-Source Leakage Current I GSS - - ±60 µA V GS = ±20V, V DS =0 Drain-Source Leakage Current I DSS - - -0.1 µA VDS = -25V, V GS =0 - - -15 V DS = -50V, V GS =0 - - -60 V DS = -50V, VGS =0, TJ =125 °C ON Characteristics 1 Gate Threshold Voltage V GS(TH) -0.8 - -2 V V DS =V GS , ID = -1mA Transfer Admittance |yfs| 50 - - mS VDS = -25V, ID = -100mA, f=1kHz Drain-Source On Resistance R DS(ON) - 5 10 Ω V GS = -5V, I D = -100mA Dynamic Characteristics Turn-on Delay Time T d(on) - 2.5 - nS VDD = -15V ID = -2.5A R L=50 Ω Rise Time T r - 1 - Turn-off Delay Time T d(off) - 16 - Fall Time T f - 8 - Gate Charge Q T - 6000 - pC Input Capacitance C iss - 30 - pF VDS = -5V Output Capacitance C oss - 10 - V DS = -5V Reverse Transfer Capacitance C rss - 5 - V DG = -5V Source-Drain Diode Continuous Current I S - - -0.130 A Pulsed Current I SM - - -0.520 Forward On Voltage 2 V SD - -2.5 - V Notes: 1. Pulse Test: Pulse Width ≦ 300 µs, Duty cycle ≦ 2% 2. Switching characteristics are independent of operating junction temperature.
-0.13A , -50V , R DS(ON) 10 Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 04-Nov-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
-0.13A , -50V , R DS(ON) 10 Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 04-Nov-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES