SSF8421 SILIKRON | Alldatasheet

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©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.0 page 1 of 4 A Good-Ark Company PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity

8421 SSF8421 TSSOP-8 Ø330mm 12mm 3000 units

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V ID 4.5 -3.5 A Drain Current-Continuous@Current-Pulsed (Note 1) IDM 30 -30 A Maximum Power Dissipation PD 1.0 1.0 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 -55 To 150 ℃ THERMAL CHARACTERISTICS N-Ch 83 Thermal Resistance,Junction-to-Ambient (Note2) RθJA P-Ch 100 /W℃ ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS GENERAL FEATURES

  • N-Channel V = 20V,I DS D = 4.5A < 40mΩ @ VRDS(ON) GS=2.5V Schematic diagram < 30mΩ @ VRDS(ON) GS=4.5V
  • P-Channel V = -20V,IDS D = -3.5A < 85mΩ @ VRDS(ON) GS=-2.5V < 50mΩ @ VRDS(ON) GS=-4.5V Marking and pin Assignment
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package TSSOP-8 to p view

©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.0 page 2 of 4 A Good-Ark Company VGS=0V ID=250μA N-Ch 20 Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA P-Ch -20 V VDS=20V,VGS=0V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V P-Ch -1 μA N-Ch ±100 Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V P-Ch ±100 nA ON CHARACTERISTICS (Note 3) VDS=VGS,ID=250μA N-Ch 0.6 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA P-Ch -0.6 V VGS=4.5V, ID=4.5A N-Ch 23 30 VGS=-4.5V, ID=-3.5A P-Ch 40 50 VGS=2.5V, ID=3.9A N-Ch 30 40 Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2.7A P-Ch 60 85 mΩ VDS=10V,ID=4.5A N-Ch 20 Forward Transconductance gFS VDS=-10V,ID=-3.5A P-Ch 10 S SWITCHING CHARACTERISTICS (Note 4) N-Ch 22 50 Turn-on Delay Time td(on) P-Ch 27 50 nS N-Ch 40 80 Turn-on Rise Time tr P-Ch 30 60 nS N-Ch 50 100 Turn-Off Delay Time td(off) P-Ch 55 100 nS N-Ch 20 40 Turn-Off Fall Time tf N-Ch VDD=10 V,ID=1A VGEN=10V,RGEN=6Ω P-Ch VDD=-10V,ID=-1A VGEN=-10V,RGEN=6Ω P-Ch 21 40 nS N-Ch 10 20 Total Gate Charge Qg P-Ch 14 25 nC N-Ch 2.5 Gate-Source Charge Qgs P-Ch 3.5 nC N-Ch 3.0 Gate-Drain Charge Qgd N-Ch VDS=15V,ID=4.5A,VGS=4.5V P-Ch VDS=-15V,ID=-4.5A,VGS=-3.5V P-Ch 3.5 nC

TSSOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.0 page 4 of 4 A Good-Ark Company