SSF8421

SSF8421 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 4 Rev.1.0 SSF8421 20V C omplementary MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity

8421 SSF8421 TSSOP-8 Ø330mm 12mm 3000 units

ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 20 -20 V Gate-Source Voltage V GS ±12 ±12 V I D 4.5 -3.5 A Drain Current-Continuous@Current-Pulsed (Note 1) I DM 30 -30 A Maximum Power Dissipation P D 1.0 1.0 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 THERMAL CHARACTERISTICS N-Ch 83 Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 100 /W℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS GENERAL FEATURES N-Channel V DS = 20V,I D = 4.5A R DS(ON) < 40mΩ @ V GS =2.5V R DS(ON) < 30mΩ @ V GS =4.5V P-Channel V DS = -20V,I D = -3.5A R DS(ON) < 85mΩ @ V GS =-2.5V R DS(ON) < 50mΩ @ V GS =-4.5V High Power and current handing capability Lead free product Surface Mount Package Marking and P in Assignment TSSOP T op V iew Schematic D iagram

www.goodark.com Page 2 of 4 Rev.1.0 SSF8421 20V C omplementary MOSFET V GS =0V I D =250μA N-Ch 20 Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA P-Ch -20 V V DS =20V,V GS =0V N-Ch 1 Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V P-Ch -1 μA N-Ch ±100 Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V P-Ch ±100 nA ON CHARACTERISTICS (Note 3) V DS GS D =250μA N-Ch 0.6 Gate Threshold Voltage V GS(th) V DS GS D =-250μA P-Ch -0.6 V V GS =4.5V, I D =4.5A N-Ch 23 V GS =-4.5V, I D =-3.5A P-Ch 40 V GS =2.5V, I D =3.9A N-Ch 30 Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-2.7A P-Ch 60 mΩ V DS =10V,I D =4.5A N-Ch 20 Forward Transconductance g FS V DS =-10V,I D =-3.5A P-Ch 10 S SWITCHING CHARACTERISTICS (Note 4) N-Ch 22 Turn-on Delay Time t d(on) P-Ch 27 nS N-Ch 40 Turn-on Rise Time t r P-Ch 30 nS N-Ch 50 100 Turn-Off Delay Time t d(off) P-Ch 55 100 nS N-Ch 20 Turn-Off Fall Time t f N-Ch V DD =10 V,I D =1A V GEN =10V,R GEN =6Ω P-Ch V DD =-10V,I D =-1A V GEN =-10V,R GEN =6Ω P-Ch 21 nS N-Ch 10 Total Gate Charge Q g P-Ch 14 nC N-Ch 2.5 Gate-Source Charge Q gs P-Ch 3.5 nC N-Ch 3.0 Gate-Drain Charge Q gd N-Ch V DS =15V,I D =4.5A,V GS =4.5V P-Ch V DS =-15V,I D =-4.5A,V GS =-3.5V P-Ch 3.5 nC

www.goodark.com Page 4 of 4 Rev.1.0 SSF8421 20V C omplementary MOSFET TSSOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.