SSF8205VA SILIKRON | Alldatasheet
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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 1 of 6 MainProductCharacteristics: FeaturesandBenefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID@TC=25°C ContinuousDrainCurrent,VGS @ 10V① 6 A IDM PulsedDrainCurrent② 25 PD @TC=25°C PowerDissipation③ 1.5 W VDS Drain-SourceVoltage 20 V VGS Gate-to-SourceVoltage ±10 V EAS SinglePulseAvalancheEnergy@L=0.5mH 12 mJ TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 20V RDS(on) 19.6mΩ(typ.) ID 6A MarkingandPin Assignments SchematicDiagram AdvancedMOSFETprocesstechnology Special designed for PWM, load switching and generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃ operatingtemperature Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. TSSOP-8
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 2 of 6 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJA Junction-to-ambient(t ≤ 10s) ④ — 83 ℃/W Electrical Characterizes @TA=25℃ unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 20 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 19.6 27.5 mΩ VGS=4.5V,ID =4.5A VGS(th) Gatethresholdvoltage 0.5 — 1.2 V VDS =VGS,ID =250μA IDSS Drain-to-Sourceleakagecurrent — — 1 μA VDS =18V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =10V — — -100 VGS =-10V Qg Totalgatecharge — 10 — nC ID =6A, VDS=10V, VGS =4.5V Qgs Gate-to-Sourcecharge — 2.3 — Qgd Gate-to-Drain("Miller")charge — 3 — td(on) Turn-ondelaytime — 10 — ns VGS=4.5V,VDS=10V, RGEN=6Ω ID =1A tr Risetime — 11 — td(off) Turn-Offdelaytime — 35 — tf Falltime — 30 — Ciss Inputcapacitance — 409 — pF VGS =0V VDS =8V ƒ=1MHz Coss Outputcapacitance — 95 — Crss Reversetransfercapacitance — 69 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 1.7 A MOSFETsymbol showing the integralreverse p-njunctiondiode. VSD DiodeForwardVoltage — 0.8 1.2 V IS=1.7A,VGS=0V
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 3 of 6 Test circuits and Waveforms EAS Test Circuit: Gate charge test circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PDisbased onmax. junctiontemperature, usingjunction-to-casethermal resistance. ④Thevalue ofRθJA is measuredwith the devicemounted on 1in2FR-4 board with 2oz. Copper,in a still airenvironmentwith TA=25°C
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 5 of 6 Mechanical Data：
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