SSF8205UH2 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 8
Technical content
www.goodark.com Page 1 of 8 Rev.1.0 Main Product Characteristics Features and Benefits
Description
Parameter Symbol Limit Unit Drain-Source Voltage V DS 18 V Gate-Source Voltage V GS ±10 V I D 4.5 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 25 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 83 /W ℃ V DSS 18V R DS (on) 20mohm(typ.) I D 4.5A TSSOP-8 Marking and Pin Assignment Schematic Diagram Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 ℃ operating temperature Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications
www.goodark.com Page 2 of 8 Rev.1.0
Electrical Characteristics
A =25℃ unless otherwise specified Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 18 V Zero Gate Voltage Drain Current I DSS V DS =18V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 0.8 1.2 V V GS =4.5V, I D =4.5A 20 28 mΩ Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =3.5A 25 38 mΩ Forward Transconductance g FS V DS =5V,I D =4.5A 10 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 800 PF Output Capacitance C oss 155 PF Reverse Transfer Capacitance C rss V DS =8V,V GS =0V, F=1.0MHz 125 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 18.3 nS Turn-on Rise Time t r 4.8 nS Turn-Off Delay Time t d(off) 43.5 nS Turn-Off Fall Time t f V DD =10V,I D =1A V GS =4V,R GEN =10Ω 20 nS Total Gate Charge Q g 11 nC Gate-Source Charge Q gs 2.2 nC Gate-Drain Charge Q gd V DS =10V,I D =4.5A, V GS =4V 2.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =2A 0.8 1.2 V Diode Forward Current (Note 2) I S 4.5 A
www.goodark.com Page 3 of 8 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 6 of 8 Rev.1.0 r(t),Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration(sec) Figure 12: Normalized Maximum Transient Thermal Impedance
www.goodark.com Page 7 of 8 Rev.1.0 Mechanical Data TSSOP-8 Dimensions in Millimeters (UNIT:mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
www.goodark.com Page 8 of 8 Rev.1.0 Ordering and Marking Information Device Marking: 8205UH2 Package (Available) TSSOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TSSOP-8 3000pcs 2pcs 6000pcs 8pcs 48000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ or 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices