SSF7NS65UF GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 7 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 5 I DM Pulsed Drain Current A Power Dissipation 33 W P D @TC = 25°C Linear Derating Factor 0.264 W/°C V DS Drain-Source Voltage 650 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=100mH 98 mJ I AS Avalanche Current @ L=100mH 1.4 A T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C V DSS 650V R DS (on) 0.6Ω (typ.) I D TO-220F Marking and Pin Assignment Schematic Diagram  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product The SSF7NS65UF series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS(ON) , energy saving, high reliability and uniformity, superior power density and space saving.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 3.8 ℃/W R θJA Junction-to-ambient (t ≤ 10s) — 80 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 650 — — V V GS = 0V, I D = 250μA — 0.6 0.75 V GS =10V,I D = 1A — 1.3 — Ω T J = 125°C — 0.64 0.9 V GS =10V,I D = 2.8A R DS(on) Static Drain-to-Source on-resistance — 1.5 — Ω T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.2 — V T J = 125°C — — 1 V DS =650V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 13 — Q gs Gate-to-Source charge — 2.6 — Q gd Gate-to-Drain("Miller") charge — 3.1 — nC I D = 5A, V DS =200V, V GS = 10V t d(on) Turn-on delay time — 12 — t r Rise time — 7.5 — t d(off) Turn-Off delay time — 30 — t f Fall time — 18 — ns V GS =10V, V DS =400V, R GEN =10.2Ω,I D =1.5A C iss Input capacitance — 500 — C oss Output capacitance — 24 — C rss Reverse transfer capacitance — 3 — pF V GS = 0V V DS = 100V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 7 A I SM Pulsed Source Current (Body Diode) — — 28 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.8 1.2 V I S =2.8A, V GS =0V t rr Reverse Recovery Time — 126 — nS Q rr Reverse Recovery Charge — 560 — nC T J = 25°C, I F = 1.5A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max e Q 1 3 o o o o o o Q 2 43 o o o o o o Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.10BSC TO220F PACKAGE OUTLINE DIMENSION_GN

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSF7NS65UF Package (Available) TO-220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-220F 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices