SSF7NS65G_15 GOOD-ARK | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

www.goodark.com Page 1 of 7 Rev.1.2 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 7 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 5 I DM Pulsed Drain Current A Power Dissipation 83 W P D @TC = 25°C Linear Derating Factor 0.67 W/°C V DS Drain-Source Voltage 650 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=15.2mH 68 mJ I AR Avalanche Current @ L=15.2mH 3 A T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C V DSS 650V R DS (on) 0.58Ω (typ.) I D TO-251 Marking and Pin Assignment Schematic Diagram  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product The SSF7NS65G series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS(ON) , energy saving, high reliability and uniformity, superior power density and space saving.

www.goodark.com Page 2 of 7 Rev.1.2 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 1.5 ℃/W R θJA Junction-to-ambient (t ≤ 10s) — 83 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 650 — — V V GS = 0V, I D = 250μA — 0.58 0.65 V GS =10V,I D = 2.1A R DS(on) Static Drain-to-Source on-resistance — 1.29 — Ω T J = 125℃ 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.75 — V T J = 125℃ — — 1 V DS = 650V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 12.8 Q gs Gate-to-Source charge — 1.8 Q gd Gate-to-Drain("Miller") charge — 6.2 nC I D = 3.2A, V DS =480V, V GS = 10V t d(on) Turn-on delay time — 10.5 t r Rise time — 5.8 t d(off) Turn-Off delay time — t f Fall time — ns V GS =10V, V DS =400V, R L =125Ω, R GEN =6.8Ω I D =3.2A C iss Input capacitance — 470 C oss Output capacitance — 26.5 C rss Reverse transfer capacitance — 3.07 V GS = 0V V DS = 100V ƒ = 1MHz C o(er) Effective output capacitance, energy related V GS =0V, V DS =0...480V C o(tr) Effective output capacitance, time related pF ID=constant, V GS =0V V DS =0...480V Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 7 A I SM Pulsed Source Current (Body Diode) — — 28 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.85 1.2 V I S =4.6A, V GS =0V t rr Reverse Recovery Time — 169 — nS Q rr Reverse Recovery Charge — 723 — nC T J = 25°C, I F =1.2A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.2 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C o(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% V (BR)DSS o(tr) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% V (BR)DSS

www.goodark.com Page 6 of 7 Rev.1.2 Mechanical Data Min Nom Max Min Nom Max e θ1 5 o o o o o o θ2 5 o o o o o o Symbol Dimension In Millimeters Dimension In Inches 5.300REF 0.209REF 0.090BSC 2.286BSC TO-251 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.1.2 Ordering and Marking Information Device Marking: SSF7NS65G Package (Available) TO-251(IPAK) Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-251 80 60 4800 5 24000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices