SSF7N60B

SSF7N60B FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 5.4A, 600V, R DS(on) = 1.2Ω @VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter SSF7N60B Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 5.4 A - Continuous (TC = 100°C) 3.4 A IDM Drain Current - Pulsed (Note 1) 21.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 420 mJ IAR Avalanche Current (Note 1) 5.4 A EAR Repetitive Avalanche Energy (Note 1) 8.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 86 W - Derate above 25°C 0.69 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8! from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.45 °C /W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C /W !!!! !!!! !!!! """" !!!! !!!! !!!! #### !!!! !!!! !!!! """" !!!! !!!! !!!! #### S D G TO-3PF SSF SeriesGSD

Rev. B, November 2001 SSF7N60B (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2001 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 26.4mH, IAS = 5.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD " 7.0A, di/dt " 300A/µs, VDD " BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width " 300µs, Duty cycle " 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.65 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA VDS = 480 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.7 A -- 1.0 1.2 Ω gFS Forward Transconductance VDS = 40 V, ID = 2.7 A -- 7.3 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1380 1800 pF Coss Output Capacitance -- 115 150 pF Crss Reverse Transfer Capacitance -- 23 30 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 7.0 A, RG = 25 Ω -- 30 70 ns tr Turn-On Rise Time -- 80 170 ns td(off) Turn-Off Delay Time -- 125 260 ns tf Turn-Off Fall Time -- 85 180 ns Qg Total Gate Charge VDS = 480 V, ID = 7.0 A, VGS = 10 V -- 38 50 nC Qgs Gate-Source Charge -- 6.4 -- nC Qgd Gate-Drain Charge -- 15 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.4 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 21.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.4 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 7.0 A, dIF / dt = 100 A/µs -- 415 -- ns Qrr Reverse Recovery Charge -- 4.6 -- µC

Rev. B, November 2001©2001 Fairchild Semiconductor Corporation SSF7N60B Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50K) 200nF12V Same Type as DUT Charge VGS 10V Qg Qgs Qgd 3mA VGS DUT VDS 300nF 50K) 200nF12V Same Type as DUT VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS VGS VDS 10% 90% td(on) tr t on t off td(off) tf VDD 10V VDS RL DUT RG VGS EAS =L I AS 2----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG L I D t p EAS =L I AS 2----2 1EAS =L I AS 2----2 1----2 BVDSS -V DD BVDSS VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time 10V DUT RG LL I DI D t p Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms

©2001 Fairchild Semiconductor Corporation Rev. B, November 2001 SSF7N60B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

• ISD controlled by pulse period VDD L I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
• ISD controlled by pulse period VDD LL I SD 10V VGS ( Driver ) I SD ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop VSD IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

Rev. B, November 2001©2001 Fairchild Semiconductor Corporation SSF7N60B Package Dimensions 26.50 ±0.20 4.50 ±0.20 10° 16.50 ±0.20 22.00 ±0.20 23.00 ±0.20 1.50 ±0.20 14.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 0.85 ±0.03 2.00 ±0.20 5.50 ±0.20 3.00 ±0.20 (1.50) 3.30 ±0.20 2.00 ±0.20 4.00 ±0.20 2.50 ±0.20 14.80 ±0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 0.75+0.20 –0.10 0.90+0.20 –0.10 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] TO-3PF Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER is used under license ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET VCX™