SSF7N60 SILIKRON | Alldatasheet
Document overview
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Technical content
Features
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description
The SSF7N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. Application ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous Drain Current,VGS@10V 7.2 A ID@Tc=ْC Continuous Drain Current,VGS@10V 4.8 IDM Pulsed Drain Current ① 28.8 PD@TC=ْC Power Dissipation 145 W Linear derating Factor 0.8 WْC VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy ② 586 mJ IAR Avalanche Current ① 4 A EAR Repetitive Avalanche Energy ① 15 mJ dv/dt Peak Diode Recovery dv/dt ③ 4.5 V/ns TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — — 0.86 ْC/W RθCS Case-to-Sink,Flat,Greased Surface — 0.50 — RθJA Junction-to-Ambient — — 62.5 VDSS = 600V ID = 7A Rdson = 0.9Ω (typ.) SSF7N60 TOP View (TO220)
©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 page 2of6 SSF7N60 Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 — — V VGS=0V,ID=250μA △ V(BR)DSS/ △ TJ Breakdown Voltage Temp.Coefficient — 0.6 — VْC Reference to ْC,ID=250μA RDS(on) Static Drain-to-Source On-resistance — 0.9 1.1 Ω VGS=10V,ID=3.8A ④ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS,ID=250μA gfs Forward Transconductance — 6.4 — S VDS=40V,ID=3.8A IDSS Drain-to-Source Leakage current — — 1 uA VDS=600V,VGS=0V — — 10 VDS=480V,VGS=0V,TJ=ْC IGSS Gate-to-Source Forward leakage — — 0.5 uA VGS=30V Gate-to-Source Reverse leakage — — -0.5 VGS=-30V Qg Total Gate Charge — 28.5 15 nC ID=7.5A VDS=480V VGS=10V Qgs Gate-to-Source charge — 7 — Qgd Gate-to-Drain("Miller") charge — 14.6 — td(on) Turn-on Delay Time — 29 70 nS VDD=300V ID=7.5A RG=25Ω tr Rise Time — 78 160 td(off) Turn-Off Delay Time — 65 130 tf Fall Time — 60 128 Ciss Input Capacitance — 1000 1350 pF VGS=0V VDS=25V f=1.0MHZ Coss Output Capacitance — 125 165 Crss Reverse Transfer Capacitance — 16 21 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 7.2 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 28.8 VSD Diode Forward Voltage — — 1.3 V TJ=ْC,IS=7.2A,VGS=0V ④ Trr Reverse Recovery Time — 300 — nS TJ=ْC,IF=7.2A di/dt=100A/μs ④ Qrr Reverse Recovery Charge — 1.8 uC Notes: ① Repetitive rating; pulse width limited by maximum. junction temperature ② L = 23.5mH, IAS =6.5A, VDD = 50V, RG = 25Ω, Starting, TJ = 25° C ③ ISD≤4A, di/dt≤200A/μs, VDD≤V(BR)DSS, TJ≤25°C ④ Pulse width≤300μS; duty cycle≤2%
©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 page 5of6 SSF7N60 Test Circuit and Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform
©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 page 6of6 SSF7N60 TO-220 MECHANICAL DATA: