SSF7509A_15 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.2.1 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 80 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 70 I DM Pulsed Drain Current② 320 A Power Dissipation③ 187 W P D @TC = 25°C Linear Derating Factor 2.0 W/°C V DS Drain-Source Voltage 75 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy @ L=0.3mH② 375 mJ I AR Avalanche Current @ L=0.3mH② 50 A T J T STG Operating Junction and Storage Temperature Range -55 to + 175 °C V DSS 75V R DS (on) 6.5mohm(typ.) I D 80A D2P AK Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.2.1 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 0.8 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 75 — — V V GS = 0V, ID = 250μA — 6.5 8 V GS =10V,I D = 30A R DS(on) Static Drain-to-Source on-resistance — 12.5 13 mΩ T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.35 — V T J = 125°C — — 1 V DS = 75V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =20V I GSS Gate-to-Source forward leakage -100 nA V GS = -20V Q g Total gate charge — 93.6 Q gs Gate-to-Source charge — 20.2 Q gd Gate-to-Drain("Miller") charge — 33.3 nC I D = 30A, V DS =30V, V GS = 10V t d(on) Turn-on delay time — 17.3 t r Rise time — 15.2 t d(off) Turn-Off delay time — t f Fall time — ns V GS =10V, VDS=30V, R L =15Ω, R GEN =2.5Ω C iss Input capacitance — 4373 C oss Output capacitance — 352 C rss Reverse transfer capacitance — 306 pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 80 A I SM Pulsed Source Current (Body Diode) — — 320 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.85 1.3 V I S =30A, V GS =0V t rr Reverse Recovery Time — — ns Q rr Reverse Recovery Charge — — nC T J = 25°C, I F =75A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.2.1 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C. ⑥ The maximum current rating is limited by bond-wires.

www.goodark.com Page 6 of 7 Rev.2.1 Mechanical Data Min Max Min Max A 9.660 10.280 0.380 0.405 B 1.020 1.320 0.040 0.052 C 8.590 9.400 0.338 0.370 D1 1.140 1.400 0.045 0.055 D2 0.700 0.950 0.028 0.037 E 15.090 15.390 0.594 0.606 F 1.150 1.400 0.045 0.055 G 4.300 4.700 0.169 0.185 H 2.290 2.790 0.090 0.110 I K 1.300 1.600 0.051 0.063 a1 0.450 0.650 0.018 0.026 a2 0 Symbol Dimension In Millimeters Dimension In Inches 5.080 (TYP) 0.250 (TYP) 0.010 (TYP) 0.200 (TYP) TO263 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.2.1 Ordering and Marking Information Device Marking: SSF7509A Package (Available) D2PAK Operating Temperature Range C : -55 to 175 ºC Devices per Unit Packag e Type Units/Tu be Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box D2PAK 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices