SSF7509 SILIKRON | Alldatasheet
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Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 80 A ID@Tc=100ْC Continuous drain current,VGS@10V 72 IDM Pulsed drain current ① 320 PD@TC=25ْC Power dissipation 165 W Linear derating factor 2.0 W/ ْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns EAS Single pulse avalanche energy ② 500 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.75 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 80 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 0.0067 0.008 Ω VGS=10V,ID=40A VGS(th) Gate threshold voltage 2.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current —— 2 μA VDS=80V,VGS=0V —— 1 0 VDS=80V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF7509 TOP View (TO220) ID=80A BV=80V Rdson=8mohm Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 6.2mohm. Application: Power switching application
Gate-to-Source reverse leakage — — -100 VGS=-20V Qg Total gate charge — 100 — nC ID= 3 0 A VDD=30V VGS=10V Qgs Gate-to-Source charge — 18 — Qgd Gate-to-Drain("Miller") charge — 28 — td(on) Turn-on delay time —2 0 — nS VDD= 3 0 V ID=2A ,RL=15Ω RG=2.5Ω VGS= 1 0 V tr Rise time — 17.8 — td(off) Turn-Off delay time — 76.8 — tf Fall time — 15.7 — Ciss Input capacitance — 3200 — pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Coss Output capacitance — 330 — Crss Reverse transfer capacitance — 260 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 80 A MOSFET symbol showing the integral reverse p-n junction diode. ISM P u l s e d S o u r c e C u r r e n t . (Body Diode) ① — — 320 VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=40A,VGS=0V ③ trr Reverse Recovery Time － 57 — nS TJ=25ْC,IF=75A di/dt=100A/μs ③ Qrr Reverse Recovery Charge － 108 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Gate charge test circuit: EAS test circuits: BVdss Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 57A, VDD = 47V ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C
Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature Switch Waveforms: Switch Time Test Circuit：
Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve
TO220 MECHANICAL DATA: