SSF7504A SILIKRON | Alldatasheet
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Feathers: ID=220A BV=75V Rdson=2.7mΩ(typ.) Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Absolute Maximum Ratings Parameter Max. Units ID@Tc=25ْC Continuous drain current,VGS@10V 220 ID@Tc=100ْC Continuous drain current,VGS@10V 170 IDM Pulsed drain current ① 880 A PD@TC=25ْC Power dissipation 370 W Linear derating factor 2.0 W/ْC VGS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 20 v/ns EAS Single pulse avalanche energy ② 960 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +175 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.41 — RθJA Junction-to-ambient — — 62 ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 75 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 2 . 7 4 mΩ VGS=10V,ID=40A VGS(th) Gate threshold voltage 2.0 3.1 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance — 65 — S VDS=5V,ID=30A — — 10 VDS=80V,VGS=0V IDSS Drain-to-Source leakage current — — 50 μA VDS=80V, VGS=0V,TJ=150ْC Description: The SSF7504A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 2.7mohm. Application: Power switching application SSF7504A TOP View (TO-263)
Gate-to-Source forward leakage — — 100 VGS=20V IGSS Gate-to-Source reverse leakage — — -100 nA VGS=-20V Qg Total gate charge — 140 — Qgs Gate-to-Source charge — 30 — Qgd Gate-to-Drain("Miller") charge — 36 — nC ID=30A VDD=30V VGS=10V td(on) Turn-on delay time — 22 — tr Rise time — 35 — td(off) Turn-Off delay time — 77.8 — tf Fall time — 19.8 — nS VDD= 3 0 V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V Ciss Input capacitance — 7005 — Coss Output capacitance — 600 — Crss Reverse transfer capacitance — 280 — pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 220 ISM P u l s e d S o u r c e C u r r e n t . (Body Diode) ① — — 880 A MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=40A,VGS=0V ③ trr Reverse Recovery Time － 80 — nS Qrr Reverse Recovery Charge － 270 — nC TJ=25ْC,IF=75A di/dt=100A/μs ③ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 80A, VDD = 37.5V ③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C Gate charge test circuit: EAS test circuits: BVdss
Switch Time Test Circuit： Switch Waveforms: Figure1:Transfer Characteristic Figure2:Capacitance Figure3:On Resistance vs Junction Temperature Figure4:Breakdown Voltage vs Junction Temperature
Figure5:Gate Charge Figure6:Source-Drain Diode Forward Voltage Figure7:Safe Operation Area Figure8:Max Drain Current vs Junction Temperature Figure9:Transient Thermal Impedance Curve
TO-263 MECHANICAL DATA: