SSF7504 GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 6 Rev.2.0 SS F 75V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 220 I D c C Continuous drain current,VGS@10V 170 I DM Pulsed drain current ① 880 A P D C C Power dissipation 370 W C V GS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 20 v/ns E AS Single pulse avalanche energy ② 960 mJ E AR Repetitive avalanche energy TBD T J T STG Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 0.41 — R θJA Junction-to-ambient — — 62 C/W Electrical Characteristics @T J C(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 75 — — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 2.7 4 mΩ V GS =10V,I D =40A V GS(th) Gate threshold voltage 2.0 3.1 4.0 V V DS GS D =250μA g fs Forward transconductance — 65 — S V DS =5V,I D =30A I DSS Drain-to-Source leakage current — — 10 μA V DS =80V,V GS =0V SSF7504 Top View (TO-220) ID=220A BV=75V R DS(ON) =2.7mΩ (typ.)
FEATURES
Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low R DS(ON) Fully characterized Avalanche voltage and current Avalanche Energy 100% test Lead free product
DESCRIPTION
The SSF7504 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical R DS(ON) can reduce to 2.7mohm.
APPLICATIONS
Power switching application
www.goodark.com Page 2 of 6 Rev.2.0 SS F 75V N-Channel MOSFET — 50 V DS =80V, V GS =0V,T J C Gate-to-Source forward leakage — — 100 V GS =20V I GSS Gate-to-Source reverse leakage — — -100 nA V GS =-20V Qg Total gate charge — 140 — Qgs Gate-to-Source charge — 30 — Qgd Gate-to-Drain("Miller") charge — 36 — nC I D =30A V DD =30V V GS =10V td(on) Turn-on delay time — 22 — tr Rise time — 35 — td(off) Turn-Off delay time — 77.8 tf Fall time — 19.8 nS V DD =30V I D =2A ,R L =15Ω R G =2.5Ω V GS =10V Ciss Input capacitance — 7005 Coss Output capacitance — 600 — Crss Reverse transfer capacitance — 280 — pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current . (Body Diode) — — 220 I SM Pulsed Source Current . (Body Diode) ① — — 880 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =40A,V GS =0V ③ t rr Reverse Recovery Time － 80 — nS Q rr Reverse Recovery Charge － 270 — nC T J C,I F =75A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 80A, VDD = 37.5V. Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting T J = 25°C.
www.goodark.com Page 3 of 6 Rev.2.0 SS F 75V N-Channel MOSFET Gate charge test circuit EAS test circuits Switch Waveforms Switch Time Test Circuit
www.goodark.com Page 4 of 6 Rev.2.0 SS F 75V N-Channel MOSFET Figure1: Transfer Characteristic Figure2: Capacitance Figure3: On Resistance vs Junction Temperature Figure4: Breakdown Voltage vs Junction Temperature
www.goodark.com Page 5 of 6 Rev.2.0 SS F 75V N-Channel MOSFET Figure5:Gate Charge Figure6:Source-Drain Diode Forward Voltage Figure7:Safe Operation Area Figure8: Max Drain Current vs Junction Figure9: Transient Thermal Impedance Curve
www.goodark.com Page 6 of 6 Rev.2.0 SS F 75V N-Channel MOSFET TO-220 MECHANICAL DATA