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Technical content
30V , 1.7A , RDS(ON) 85mΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 7400 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSF7400 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltage as low as 2.5V. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.
FEATURES
- Lower Gate Charge
- Small Package Outline MARKING
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS ( TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±12 V TA=25°C 1.7 Continuous Drain Current3 TA=70°C ID 1.3 A Pulsed Drain Current 1,2 IDM 10 A Power Dissipation T A=25°C P D 0.35 W Linear Derating Factor 0.0028 W / °C Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient3 R JA 360 °C / W Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦300us, duty cycle≦2%. 3. Surface mounted on FR4 board, t ≦10sec. SOT-323 Top View A L C B D G H JF K E 1 2 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40
30V , 1.7A , RDS(ON) 85mΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS=0, ID=250μA Gate-Threshold Voltage V GS(th) 0.6 - 1.4 V V DS=VGS, ID=250μA Gate-Body Leakage Current I GSS - - ±100 nA V GS=±12V - - 1 V DS=30V, VGS=0 Drain-Source Leakage Current I DSS - - 5 μA VDS=24V, VGS=0 - - 85 V GS=10V, ID=1.5A - - 100 V GS=4.5V, ID=1.5A Drain-Source On-Resistance 1 R DS(ON) - - 140 mΩ VGS=2.5V, ID=1A Forward Transconductance g fs - 4 - S V DS=5V, ID=1.5A Dynamic Total Gate Charge1 Q g - 4.82 - Gate-Source Charge Q gs - 0.62 - Gate-Drain (“Miller”) Change Q gd - 1.58 - nC VDS=15V, VGS=4.5V, ID=1.7A Turn-on Delay Time1 T d(on) - 2.5 - Rise Time T r - 2.3 - Turn-off Delay Time T d(off) - 22 - Fall Time T f - 3 - nS VDS=15V, VGS=10V, RG=3Ω, RL=10Ω, Input Capacitance C iss - 390 - Output Capacitance C oss - 54.4 - Reverse Transfer Capacitance C rss - 41 - pF VGS=0, VDS=15V, f=1.0MHz Gate Resistance Rg - 3 - Ω f=1.0MHz Source-Drain Diode Continuous Source Current (Body Diode) IS - - 0.5 A V G=VD=0, VS=1V Diode Forward Voltage1 V SD - - 1 V I S=1A, VGS=0 Reverse Recovery Time1 T RR - 10 - ns Reverse Recovery Charge Q RR - 3.6 - nC IS=1.7A, VGS=0 dI/dt=100A/μs Notes: 1. Pulse width ≦300us, duty cycle≦2%.
30V , 1.7A , RDS(ON) 85mΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
30V , 1.7A , RDS(ON) 85mΩ N-Ch Enhancement Mode Power MOSFET 25-Aug-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE