SSF6NS70G GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 9 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 5.2 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 3.2 I DM Pulsed Drain Current 15.6 A For TO-251/TO-252 package Power Dissipation For TO-220F package 31.2 W For TO-251/TO-252 package 0.4 P D @TC = 25°C Linear Derating Factor For TO-220F package 0.25 W/°C V DS Drain-Source Voltage 700 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=22.4mH 54 mJ I AR Avalanche Current @ L=22.4mH 2.2 A T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C V DSS 700V R DS (on) 1.2Ω (typ.) I D 5.2A TO-251 SSF6NS70G Schematic Diagram  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product The SSF6NS70G/D/F series MOSFET is a new technology, which combines an innovative technology and advance process. This new technology achieves low R DS(ON) , energy saving, high reliability and uniformity, superior power density and space saving. TO-252 SSF6NS70D TO-220F SSF6NS70F

www.goodark.com Page 2 of 9 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units For TO-251/TO-252 package — 2.5 R θJC Junction-to-case For TO-220F package — 4 ℃/W For TO-251/TO-252 package — 75 R θJA Junction-to-ambient (t ≤ 10s) For TO-220F package — 80 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 700 — — V V GS = 0V, I D = 250μA — 1.2 1.4 V GS =10V,I D = 1A R DS(on) Static Drain-to-Source on-resistance — 2.9 — Ω T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.8 — V T J = 125°C — — 1 V DS = 700V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 8.3 — Q gs Gate-to-Source charge — 2.3 — Q gd Gate-to-Drain("Miller") charge — 2.6 — nC I D = 4A, V DS =100V, V GS = 10V t d(on) Turn-on delay time — 10.1 — t r Rise time — 18.4 — t d(off) Turn-Off delay time — 16.8 — t f Fall time — 14.8 — ns V GS =10V, V DS =380V, R GEN =18Ω,I D =4.5A C iss Input capacitance — 272 — C oss Output capacitance — 168 — C rss Reverse transfer capacitance — 3.14 — pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 5.2 A I SM Pulsed Source Current (Body Diode) — — 15.6 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.84 1.2 V I S =2.8A, V GS =0V t rr Reverse Recovery Time — 284 — nS Q rr Reverse Recovery Charge — 1395 — nC T J = 25°C, I F = I S di/dt = 100A/μs

www.goodark.com Page 3 of 9 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 6 of 9 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max A 2.200 - 2.400 0.087 - 0.094 A1 0.950 - 1.150 0.037 - 0.045 B 0.950 - 1.250 0.037 - 0.049 b 0.500 - 0.700 0.020 - 0.028 c 0.450 - 0.550 0.018 - 0.022 c1 0.450 - 0.550 0.018 - 0.022 D 6.450 - 6.750 0.254 - 0.266 D1 5.200 - 5.400 0.205 - 0.213 E 5.950 - 6.250 0.234 - 0.246 e 2.240 - 2.340 0.088 - 0.092 e1 4.430 - 4.730 0.174 - 0.186 L 9.000 - 9.400 0.354 - 0.370 Symbol Dimension In Millimeters Dimension In Inches TO-251 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 9 Rev.1.0 Min Nom Max Min Nom Max K 5.350 (REF) 2.900 (REF) 1.600 (REF) (REF) 8 (REF) 0.063 (REF) 0.211 (REF) 0.114 (REF) Symbol Dimension In Millimeters Dimension In Inches 4.83 (REF) 0.190 (REF) TO-252 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 8 of 9 Rev.1.0 Min Nom Max Min Nom Max e Q 1 3 o o o o o o Q 2 43 o o o o o o Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.10BSC TO220F PACKAGE OUTLINE DIMENSION_GN

www.goodark.com Page 9 of 9 Rev.1.0 Ordering and Marking Information Device Marking: SSF6NS70G/D/F Package (Available) TO-251(IPAK)/TO-252(DPAK)/TO-220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO-251 80 60 4800 5 24000 TO-252 75 48 3600 5 18000 TO-220F 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices