SSF6N80F GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ T C = 25°C Continuous Drain Current, V GS @ 10V① 5.5 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V① 3.2 I DM Pulsed Drain Current② 22 A Power Dissipation③ 51 W P D C = 25°C Linear Derating Factor 0.41 W/°C V DS Drain-Source Voltage 800 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=33.5mH 507 mJ I AS Avalanche Current @ L=33.5mH 5.5 A T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C V DSS 800V R DS (on) 2.2Ω (typ.) I D 5.5A TO220F Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 2.45 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62.5 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 800 — — V V GS = 0V, ID = 250μA — 2.2 2.7 V GS =10V,I D = 2.5A R DS(on) Static Drain-to-Source on-resistance — 5.08 — Ω T J = 125℃ 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 1.84 — V T J = 125℃ — — 1 V DS = 800V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125℃ 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 16.1 — Q gs Gate-to-Source charge — 5.2 — Q gd Gate-to-Drain("Miller") charge — 5.4 — nC I D = 5.5A, V DS =400V, V GS = 10V t d(on) Turn-on delay time — 14.1 — t r Rise time — 23.6 — t d(off) Turn-Off delay time — 38.6 — t f Fall time — 26.2 — ns V GS =10V, VDS=415V, R L =75Ω, R GEN =25Ω ID=5.5A C iss Input capacitance — 743 — C oss Output capacitance — 81 — C rss Reverse transfer capacitance — 3.1 — pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 5.5 A I SM Pulsed Source Current (Body Diode) — — 22 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.86 1.4 V I S =5A, V GS =0V t rr Reverse Recovery Time — 1029 — ns Q rr Reverse Recovery Charge — 3835 — nC T J = 25°C, I F =5.5A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max A1 0.276 0.000 0.000 D ϴ Symbol Dimension In Millimeters Dimension In Inches 7.000 2.54 (TYP) 0.700 1.0*45 1.00 (TYP) 0.028 1.0*45 TO220F PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSF6N80F Package (Available) TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO220F 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T J =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T J =150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices