SSF6N80A FAIRCHILD | Alldatasheet

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1.Gate 2. Drain 3. Source Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (TC=25 Ο Continuous Drain Current (TC=100 Ο Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 Ο Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Characteristic Value UnitsSymbol IDM VGS EAS IAR EAR dv/dt ID PD TJ , TSTG TL A V mJ A mJ V/ns W Ο C A Ο C VDSS V Thermal Resistance Junction-to-Case Junction-to-Ambient R θJC R θJA Ο C/W Characteristic Max. UnitsSymbol Typ. SSF6N80A BVDSS = 800 V RDS(on) = 2.0 Ω ID = 4.5 A 800 4.5 2.8 486 4.5 2.0 0.72 - 55 to +150 300 1.39 30 +_ ©1999 Fairchild Semiconductor Corporation Rev. B

Electrical Characteristics (TC=25 Ο C unless otherwise specified) Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse CharacteristicSymbol Max. UnitsTyp.Min. Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(Filler Charge gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS ΔBV/ΔTJ VGS(th) RDS(on) IGSS IDSS V Ο C V nA µA Ω Ω pF ns nC VGS=0V,ID=250µA ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V VDS=800V VDS=640V,TC=125 Ο C VGS=10V,ID=0.85A * VDS=50V,ID=0.85A VDD=400V,ID=2A, RG=16 Ω See Fig 13 VDS=640V,VGS=10V, ID=2A See Fig 6 & Fig 12 Drain-to-Source Leakage Current VGS=0V,VDS=25V,f =1MHz See Fig 5 O4 O5 O4 O5 Source-Drain Diode Ratings and Characteristics Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISM VSD trr Qrr CharacteristicSymbol Max. UnitsTyp.Min. Test Condition A V ns µC Integral reverse pn-diode in the MOSFET TJ=25 Ο C,IS=4.5A,VGS=0V TJ=25 Ο C,IF=7A diF/dt=100A/µs SSF6N80A 800 2.0 0.93 140 11.2 29.6 3.5 100 -100 250 2.0 1950 165 195 3.87 1500 520 6.66 4.5 1.4 Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=45mH, IAS=4.5A, VDD=50V, RG=27Ω , Starting TJ =25 Ο C ISD 7A, di/dt 150A/µs, VDD BVDSS , Starting TJ =25 Ο C Pulse Test : Pulse Width = 250µs, Duty Cycle 2% Essentially Independent of Operating Temperature

Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current SSF6N80A 100 101 150 oC 25 oC @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test IDR , Reverse Drain Current [A] VSD , Source-Drain Voltage [V] 10-1 100 101 10-1 100 101 @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC VGS Top : 1 5 V 1 0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID , Drain Current [A] VDS , Drain-Source Voltage [V] 2 4 6 8 1010-1 100 101 25 oC 150 oC - 55 oC @ Notes : 1. VGS = 0 V 2. VDS = 50 V 3. 250 µs Pulse Test ID , Drain Current [A] VGS , Gate-Source Voltage [V] 0 5 10 15 20 25 @ Note : TJ = 25 oC VGS = 20 V VGS = 10 V RDS(on) , [Ω ] Drain-Source On-Resistance ID , Drain Current [A] 100 1010 500 1000 1500 2000 2500 Ciss= Cgs+ Cgd (Cds= shorted) Coss= Cds+ Cgd Crss= Cgd @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss C oss C iss Capacitance [pF] VDS , Drain-Source Voltage [V] 0 10 20 30 40 50 60 700 VDS = 640 V VDS = 400 V VDS = 160 V @ Notes : ID = 7.0 A VGS , Gate-Source Voltage [V] QG , Total Gate Charge [nC]

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response PDM SSF6N80A -75 -50 -25 0 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 @ Notes : 1. VGS = 0 V 2. ID = 250 µA BVDSS , (Normalized) Drain-Source Breakdown Voltage TJ , Junction Temperature [oC] -75 -50 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 @ Notes : 1. VGS = 10 V 2. ID = 3.5 A RDS(on) , (Normalized) Drain-Source On-Resistance TJ , Junction Temperature [oC] 25 50 75 100 125 150 5ID , Drain Current [A] Tc , Case Temperature [oC] 101 102 10310-2 10-1 100 101 102 100 µs DC 10 µs 1 ms 10 ms @ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) ID , Drain Current [A] VDS , Drain-Source Voltage [V] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. ZθJC(t)=1.39 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC(t) Z θJC(t) , Thermal Response t1 , Square Wave Pulse Duration [sec]

Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2----2 BVDSS -- VDD BVDSS Vin Vout 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd Vary tp to obtain required peak ID 10V VDDC LL VDS ID RG t p DUT BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V Vout Vin RL DUT RG 3mA VGS Current Sampling (IG) Resistor Current Sampling (ID) Resistor DUT VDS 300nF 50K¥Ø 200nF12V Same Type as DUT * Current Regulator * R1 R2 SSF6N80A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS L I S DriverVGS RG Same Type as DUT VGS • dv/dt controlled by “RG

  • IS controlled by Duty Factor “D” VDD 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width SSF6N80A

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