SSF6808A3X SILIKRON | Alldatasheet
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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.2 page 1 of 8 MainProductCharacteristics: FeaturesandBenefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID@TC=25°C ContinuousDrainCurrent,VGS @ 10V① 80 A IDM PulsedDrainCurrent ② 320 PD @TC=25°C PowerDissipation ③ 108 W VDS Drain-SourceVoltage 60 V VGS Gate-to-SourceVoltage ±20 V EAS SinglePulseAvalancheEnergy@L=0.5mH 410 mJ TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 60V RDS(on) 5.8mΩ(typ.) ID 80A Marking SchematicDiagram AdvancedMOSFETprocesstechnology Special designed for PWM, load switching and generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃ operatingtemperature Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. TO-263(D2PAK)
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.2 page 2 of 8 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 1.4 ℃/W Electrical Characterizes @TA=25℃ unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 60 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 5.8 8 mΩ VGS=10V,ID =30A VGS(th) Gatethresholdvoltage 2 — 4 V VDS =VGS,ID =250μA IDSS Drain-to-Sourceleakagecurrent — — 1 μA VDS =60V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =20V — — -100 VGS =-20V Qg Totalgatecharge — 71.2 — nC ID =30A, VDS=30V, VGS =15V Qgs Gate-to-Sourcecharge — 16.4 — Qgd Gate-to-Drain("Miller")charge — 23.3 — td(on) Turn-ondelaytime — 18.8 — ns VGS=10V,VDS=30V, RGEN=3Ω ID =30A tr Risetime — 11.8 — td(off) Turn-Offdelaytime — 107.3 — tf Falltime — 58.4 — Ciss Inputcapacitance — 3934 — pF VGS =0V VDS =50V ƒ=1MHz Coss Outputcapacitance — 209 — Crss Reversetransfercapacitance — 191 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 80 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — 320 A VSD DiodeForwardVoltage — 0.89 1.2 V IS=30A,VGS=0V trr ReverseRecoveryTime — 31.4 — ns IS=30A,di/dt=100A/us Qrr ReverseRecoveryCharge — 31.1 — nC
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.2 page 3 of 8 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PDisbased onmax. junctiontemperature, usingjunction-to-casethermal resistance.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.2 page 5 of 8 Typical Electrical and Thermal Characteristics Figure7. Drain-to-Source Breakdown Voltage vs. Temperature Figure8. Normalized On-Resistance vs. Junction Temperature Figure9. Safe Operating Area Figure10.Drain Current vs. Case Temperature Figure11.Normalized Maximum Transient Thermal Impedance
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.2 page 6 of 8 Mechanical Data： Option 1
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.2 page 7 of 8 Option 2
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