SSF6808A GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 5 Rev.1.1 SSF 6808 A 68V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 84 I D c C Continuous drain current,VGS@10V 76 I DM Pulsed drain current ① 310 A Power dissipation 180 W P D C C C V GS Gate-to-Source voltage ±20 V dv/dt Peak diode recovery voltage 31 v/ns E AS Single pulse avalanche energy ② 400 mJ E AR Repetitive avalanche energy TBD T J T STG Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 0.83 — R θJA Junction-to-ambient — — 62 C/W Electrical Characteristics @T J =25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 68 — — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 5 8 mΩ V GS =10V,I D =30A V GS(th) Gate threshold voltage 2.0
4.0 V V
D =250μA — 2 V DS =68V,V GS =0V I DSS Drain-to-Source leakage current — 10 μA V DS =68V, V GS =0V,T J C I GSS Gate-to-Source forward leakage — — 100 nA V GS =20V SSF6808A Top View (TO-263) ID =84A BV=68V R DS (ON) =8mohm
FEATURES
Advanced trench process technology Ultra low Rdson, typical 5mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
DESCRIPTION
The SSF6808A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808A is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
www.goodark.com Page 2 of 5 Rev.1.1 SSF 6808 A 68V N-Channel MOSFET Gate-to-Source reverse leakage — — -100 V GS =-20V Q g Total gate charge — 90 — Q gs Gate-to-Source charge — 18 — Q gd Gate-to-Drain("Miller") charge — 28 — nC I D =30A V DD =30V V GS =10V t d(on) Turn-on delay time — 18.2 t r Rise time — 15.6 t d(off) Turn-Off delay time — 70.5 t f Fall time — 13.8 nS V DD =30V I D =2A ,R L =15Ω R G =2.5Ω V GS =10V C iss Input capacitance — 3150 C oss Output capacitance — 300 — C rss Reverse transfer capacitance — 240 — pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) — — 84 I SM Pulsed Source Current (Body Diode) ① — — 310 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =68A,V GS =0V ③ t rr Reverse Recovery Time — 57 — nS Q rr Reverse Recovery Charge — 107 — nC T J C,I F =68A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Gate charge test circuit EAS test circuit Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 37A, VDD = 30V. Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting T J = 25°C.
www.goodark.com Page 3 of 5 Rev.1.1 SSF 6808 A 68V N-Channel MOSFET Figure1: Transfer Characteristic Figure2:Capacitance Figure3:On Resistance vs. Junction Temperature Figure4:Breakdown Voltage vs. Junction Temperature Switch Waveforms Switch Time Test Circuit
www.goodark.com Page 4 of 5 Rev.1.1 SSF 6808 A 68V N-Channel MOSFET Figure5:Gate Charge Figure6:Source-Drain Diode Forward Voltage Figure7: Safe Operation Figure8:Max Drain Current vs. Junction Temperature Figure9: Transient Thermal Impedance Curve
www.goodark.com Page 5 of 5 Rev.1.1 SSF 6808 A 68V N-Channel MOSFET TO-263 MECHANICAL DATA