SSF68083X SILIKRON | Alldatasheet
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SSF68083X &SSF6808F3X ©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version :1.0 page 1 of 8 MainProductCharacteristics: FeaturesandBenefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID@TC=25°C ContinuousDrainCurrent,VGS @ 10V① 80 A IDM PulsedDrainCurrent② 320 PD @TC=25°C PowerDissipation③ TO220 92 W TO220F 38 VDS Drain-SourceVoltage 60 V VGS Gate-to-SourceVoltage ±20 V EAS SinglePulseAvalancheEnergy@L=0.5mH 191 mJ TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 60V RDS(on) 6.0mΩ(typ.) ID 80A SchematicDiagram AdvancedMOSFETprocesstechnology Special designed for PWM, load switching and generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃ operatingtemperature Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. TO-220 SSF68083X TO-220F SSF6808F3X
SSF68083X &SSF6808F3X ©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 2 of 8 Thermal Resistance Symbol Characteristics TO220 TO220F Units RθJC Junction-to-case③ 1.36 3.3 ℃/W Electrical Characteristics @TA=25℃unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 60 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 6.0 8 mΩ VGS=10V,ID =20A VGS(th) Gatethresholdvoltage 2 — 4 V VDS =VGS,ID =250μA IDSS Drain-to-Sourceleakagecurrent — — 1 μA VDS =60V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =20V — — -100 VGS =-20V Qg Totalgatecharge — 72 — nC ID =30A, VDS=30V, VGS =15V Qgs Gate-to-Sourcecharge — 16 — Qgd Gate-to-Drain("Miller")charge — 23 — td(on) Turn-ondelaytime — 17 — ns VGS=10V,VDS=30V, RGEN=3Ω ID =30A tr Risetime — 28 — td(off) Turn-Offdelaytime — 39 — tf Falltime — 12 — Ciss Inputcapacitance — 3951 — pF VGS =0V VDS =50V ƒ=1MHz Coss Outputcapacitance — 203 — Crss Reversetransfercapacitance — 180 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 80 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — 320 A VSD DiodeForwardVoltage — 0.88 1.3 V IS=30A,VGS=0V trr ReverseRecoveryTime — 31.4 — ns IS=30A,di/dt=100A/us Qrr ReverseRecoveryCharge — 31.1 — nC
SSF68083X &SSF6808F3X ©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 3 of 8 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: 1 Calculatedcontinuous currentbased onmaximum allowable junction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PDisbased onmax. junctiontemperature, usingjunction-to-casethermal resistance.
SSF68083X &SSF6808F3X ©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 5 of 8 Typical Electrical and Thermal Characteristics Figure7.Drain-to-Source Breakdown Voltage vs. Temperature Figure8.Normalized On-Resistance vs. Junction Temperature Figure9.Safe Operating Area Figure10.Drain Current vs. Case Temperature Figure11.Normalized Maximum Transient Thermal Impedance
SSF68083X &SSF6808F3X ©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 6 of 8 Mechanical Data：
SSF68083X &SSF6808F3X ©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 7 of 8 Mechanical Data：
SSF68083X &SSF6808F3X ©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : 1.0 page 8 of 8 ATTENTION: ■ AnyandallSilikronproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplications thatrequireextremelyhighlevelsofreliability,suchaslife-supportsystems,aircraft'scontrolsystems,orother applicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage. ConsultwithyourSilikronrepresentativenearestyou beforeusinganySilikronproductsdescribedorcontained hereininsuchapplications. ■ Silikronassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed, evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listed inproductsspecificationsofanyandallSilikronproductsdescribedorcontainedherein. ■ SpecificationsofanyandallSilikronproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomer shouldalwaysevaluateandtestdevicesmountedinthecustomer’sproductsorequipment. ■ SilikronMicroelectronics(Suzhou)Co.,Ltd.strivestosupplyhigh-qualityhigh-reliabilityproducts.However,anyand allsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverise to accidentsoreventsthatcouldendangerhumanlives,thatcouldgiverisetosmokeorfire,orthatcouldcause damagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsor eventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsfor safedesign,redundantdesign,andstructuraldesign. ■ IntheeventthatanyorallSilikronproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexported withoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. ■ Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofSilikronMicroelectronics(Suzhou)Co.,Ltd. ■ Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction.Silikronbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. ■ Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticedueto product/technologyimprovement,etc.Whendesigningequipment,refertothe"DeliverySpecification"forthe Silikronproductthatyouintendtouse.